Photo-stability of pulsed laser deposited GexAs ySe100-x-y amorphous thin films

Optics Express

Volumn 18, Issue 22, 2010, Pages 22944-22957

  Nemec P ^a   Zhang, S ^b   Nazabal, V ^b   Fedus, K ^c   Boudebs, G ^c   Moreac, A ^d   Cathelinaud, M ^e   Zhang, X H ^b  

^a UNIVERSITY OF PARDUBICE   (Czech Republic)

^b UNIVERSITÉ DE RENNES 1   (France)

^c UNIVERSITÉ D'ANGERS   (France)

^d UNIVERSITÉ DE RENNES 1   (France)

^e MRCT UPS CNRS 2274   (France)

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHOUS FILMS; ELECTRON ENERGY LOSS SPECTROSCOPY; GERMANIUM; IMAGING TECHNIQUES; PULSED LASER DEPOSITION; SCANNING ELECTRON MICROSCOPY; SEMICONDUCTING SELENIUM COMPOUNDS; SPECTROSCOPIC ELLIPSOMETRY; THIN FILMS; VAPOR DEPOSITION;

4F IMAGING SYSTEMS; AMORPHOUS THIN FILMS; ENERGY DISPERSIVE X RAY ANALYZER; LINEAR REGIME; NON-LINEAR IMAGING TECHNIQUES; NON-LINEAR OPTICAL; OPTICAL DAMAGE THRESHOLD; PHASE OBJECT; PHOTO-STABILITY; PULSED LASER; PULSED-LASER DEPOSITION TECHNIQUE; RAMAN SCATTERING SPECTROSCOPY; RELAXED STATE; SCANNING ELECTRON MICROSCOPE; TRANSMITTANCE MEASUREMENTS; VARIABLE ANGLE SPECTROSCOPIC ELLIPSOMETRY;

PULSED LASERS;

EID: 78149382547     PISSN: None     EISSN: 10944087     Source Type: Journal    
DOI: 10.1364/OE.18.022944     Document Type: Article

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