Spin-polarized current and tunneling magnetoresistance in ferromagnetic gate bilayer graphene structures

Journal of Applied Physics

Volumn 109, Issue 7, 2011, Pages

  Nguyen, V Hung ^a,b   Bournel, A ^a   Dollfus, P ^a  

^a UNIVERSITÉ PARIS SACLAY   (France)

^b INSTITUTE OF PHYSICS   (Viet Nam)

Author keywords

[No Author keywords available]

Indexed keywords

FERROMAGNETIC MATERIALS; FERROMAGNETISM; REFRACTORY METAL COMPOUNDS; SPIN POLARIZATION; TUNNELLING MAGNETORESISTANCE;

BILAYER GRAPHENE; EXCHANGE FIELDS; GATE ELECTRODES; HIGH SPIN POLARIZATION; SPIN POLARIZED CURRENTS; SPIN TRANSPORT; SPINTRONIC APPLICATIONS; TUNNELING MAGNETORESISTANCE;

GRAPHENE;

EID: 79955364938     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3569621     Document Type: Conference Paper

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