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Volumn 13, Issue 10, 2011, Pages 3338-3341

The growth and investigation on Ga-doped ZnO single crystals with high thermal stability and high carrier mobility

(6) Lin, Wenwen a Ding, Kai a Lin, Zhang b Zhang, Jiye a Huang, Jiakui a Huang, Feng a

a FUJIAN INSTITUTE OF RESEARCH ON THE STRUCTURE OF MATTER (China)

b FUJIAN INSTITUTE OF RESEARCH ON THE STRUCTURE OF MATTER (China)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 79955166281 PISSN: 14668033 EISSN: 14668033 Source Type: Journal
DOI: 10.1039/c1ce05122a Document Type: Article

Times cited : (33)

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