Seebeck and magnetoresistive effects of Ga-doped ZnO thin films prepared by RF magnetron sputtering

Applied Surface Science

Volumn 255, Issue 21, 2009, Pages 8855-8859

  Wu, F ^a   Fang, L ^a   Pan, Y J ^a   Zhou, K ^a   Peng, L P ^a   Huang, Q L ^a   Kong, C Y ^b  

^a CHONGQING UNIVERSITY   (China)

^b CHONGQING NORMAL UNIVERSITY   (China)

Author keywords

Ga doped ZnO thin films; Magnetoresistive effect; Magnetron sputtering; Seebeck effect

Indexed keywords

CARRIER CONCENTRATION; CRYSTAL ORIENTATION; GALLIUM COMPOUNDS; HALL MOBILITY; HETEROJUNCTIONS; II-VI SEMICONDUCTORS; MAGNETORESISTANCE; MAGNETRON SPUTTERING; METALLIC FILMS; OPTICAL FILMS; SEEBECK COEFFICIENT; SEEBECK EFFECT; SUBSTRATES; ZINC OXIDE;

GA-DOPED ZNO; MAGNETIC-FIELD INTENSITY; MAGNETO-RESISTIVE EFFECT; MORPHOLOGICAL PROPERTIES; RF-MAGNETRON SPUTTERING; SUBSTRATE TEMPERATURE; THERMO-ELECTROMOTIVE FORCES; TRANSVERSE MAGNETORESISTANCE;

THIN FILMS;

EID: 67651164993     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.apsusc.2009.06.076     Document Type: Article

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