SCOPUS 정보 검색 플랫폼

Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films

Volumn 29, Issue 3, 2011, Pages

Comprehensive study of the p-type conductivity formation in radio frequency magnetron sputtered arsenic-doped ZnO film

(13) Fan, J C a Zhu, C Y a Yang, B a Fung, S a Beling, C D a Brauer, G b Anwand, W b Grambole, D b Skorupa, W b Wong, K S c Zhong, Y C c Xie, Z d Ling, C C a

a UNIVERSITY OF HONG KONG (Hong Kong)

b INSTITUTE OF ION BEAM PHYSICS AND MATERIALS RESEARCH (Germany)

c HONG KONG UNIVERSITY OF SCIENCE AND TECHNOLOGY (Hong Kong)

d HUNAN UNIVERSITY (China)

Author keywords

[No Author keywords available]

Indexed keywords

ACCEPTOR COMPLEX; COMPREHENSIVE STUDIES; DOPED ZNO; FORMATION MECHANISM; HALL MEASUREMENTS; LOW TEMPERATURE PHOTOLUMINESCENCE; NUCLEAR REACTION ANALYSIS; P-TYPE; P-TYPE CONDUCTIVITY; RADIO FREQUENCIES; RADIO FREQUENCY MAGNETRON SPUTTERING; SUBSTRATE TEMPERATURE; THERMAL ACTIVATION; THERMAL-ANNEALING; ZNO;

ARSENIC; HOLE CONCENTRATION; POSITRON ANNIHILATION SPECTROSCOPY; POSITRONS; RADIO; RADIO WAVES; SILICON COMPOUNDS; X RAY PHOTOELECTRON SPECTROSCOPY; ZINC OXIDE;

ZINC;

EID: 79955162022 PISSN: 07342101 EISSN: None Source Type: Journal
DOI: 10.1116/1.3525639 Document Type: Article

Times cited : (10)

References (18)

1
- 25144462707
- A comprehensive review of ZnO materials and devices
- DOI 10.1063/1.1992666, 041301
- Ü. Özgür, Ya. I. Alivov, C. Liu, A. Teke, M. A. Reshchikov, S. Doǧan, V. Avrutin, S. -J. Cho, and H. Morko̧, J. Appl. Phys. 0021-8979 98, 041301 (2005). 10.1063/1.1992666 (Pubitemid 41348664)
- (2005) Journal of Applied Physics , vol.98 , Issue.4 , pp. 1-103
- Ozgur, U.¹ Alivov, Ya.I.² Liu, C.³ Teke, A.⁴ Reshchikov, M.A.⁵ Dogan, S.⁶ Avrutin, V.⁷ Cho, S.-J.⁸ Morko, H.⁹

2
- 0042842374
- 0003-6951, 10.1063/1.1590423
- Y. R. Ryu, T. S. Lee, and H. W. White, Appl. Phys. Lett. 0003-6951 83, 87 (2003). 10.1063/1.1590423
- (2003) Appl. Phys. Lett. , vol.83 , pp. 87
- Ryu, Y.R.¹ Lee, T.S.² White, H.W.³

3
- 11044222901
- As-doped p-type ZnO produced by an evaporation/sputtering process
- DOI 10.1063/1.1825615, 3
- D. C. Look, G. M. Renlund, R. H. Burgener, and J. R. Sizelove, Appl. Phys. Lett. 0003-6951 85, 5269 (2004). 10.1063/1.1825615 (Pubitemid 40043549)
- (2004) Applied Physics Letters , vol.85 , Issue.22 , pp. 5269-5271
- Look, D.C.¹ Renlund, G.M.² Burgener II, R.H.³ Sizelove, J.R.⁴

4
- 27644510488
- P type doping of zinc oxide by arsenic ion implantation
- DOI 10.1063/1.2128064, 192103
- G. Braunstein, A. Muraviev, H. Saxena, N. Dhere, V. Richter, and R. Kalish, Appl. Phys. Lett. 0003-6951 87, 192103 (2005). 10.1063/1.2128064 (Pubitemid 41567642)
- (2005) Applied Physics Letters , vol.87 , Issue.19 , pp. 1-3
- Braunstein, G.¹ Muraviev, A.² Saxena, H.³ Dhere, N.⁴ Richter, V.⁵ Kalish, R.⁶

5
- 18744365851
- Preparation of As-doped p -type ZnO films using a Zn3 As2 ZnO target with pulsed laser deposition
- DOI 10.1063/1.1854748, 062101
- V. Vaithianathan, B. -T. Lee, and S. S. Kim, Appl. Phys. Lett. 0003-6951 86, 062101 (2005). 10.1063/1.1854748 (Pubitemid 40665520)
- (2005) Applied Physics Letters , vol.86 , Issue.6 , pp. 1-3
- Vaithianathan, V.¹ Lee, B.-T.² Kim, S.S.³

6
- 33750700009
- Investigation on the p -type formation mechanism of arsenic doped p -type ZnO thin film
- DOI 10.1063/1.2364865
- H. S. Kang, G. H. Kim, D. L. Kim, H. W. Chang, B. D. Ahn, and S. Y. Lee, Appl. Phys. Lett. 0003-6951 89, 181103 (2006). 10.1063/1.2364865 (Pubitemid 44705647)
- (2006) Applied Physics Letters , vol.89 , Issue.18 , pp. 181103
- Kang, H.S.¹ Kim, G.H.² Kim, D.L.³ Chang, H.W.⁴ Ahn, B.D.⁵ Lee, S.Y.⁶

7
- 70350118030
- 0021-8979, 10.1063/1.3236578
- J. C. Fan, J. Appl. Phys. 0021-8979 106, 073709 (2009). 10.1063/1.3236578
- (2009) J. Appl. Phys. , vol.106 , pp. 073709
- Fan, J.C.¹

8
- 2542438239
- 0031-9007, 10.1103/PhysRevLett.92.155504
- S. Limpijumnong, S. B. Zhang, S. -H Wei, and C. H. Park, Phys. Rev. Lett. 0031-9007 92, 155504 (2004). 10.1103/PhysRevLett.92.155504
- (2004) Phys. Rev. Lett. , vol.92 , pp. 155504
- Limpijumnong, S.¹ Zhang, S.B.² Wei, S.-H.³ Park, C.H.⁴

9
- 65249124595
- 0556-2805, 10.1103/PhysRevB.79.115212
- G. Brauer, Phys. Rev. B 0556-2805 79, 115212 (2009). 10.1103/PhysRevB.79. 115212
- (2009) Phys. Rev. B , vol.79 , pp. 115212
- Brauer, G.¹

10
- 58149270897
- 0021-8979, 10.1063/1.3021358
- J. Petersen, J. Appl. Phys. 0021-8979 104, 113539 (2008). 10.1063/1.3021358
- (2008) J. Appl. Phys. , vol.104 , pp. 113539
- Petersen, J.¹

11
- 55649117354
- 1932-7447, 10.1021/jp804132u
- Y. Zhong, A. B. Djurišić, Y. F. Hsu, K. S. Wong, G. Brauer, C. C. Ling, and W. K. Chan, J. Phys. Chem. C 1932-7447 112, 16286 (2008). 10.1021/jp804132u
- (2008) J. Phys. Chem. C , vol.112 , pp. 16286
- Zhong, Y.¹ Djurišić, A.B.² Hsu, Y.F.³ Wong, K.S.⁴ Brauer, G.⁵ Ling, C.C.⁶ Chan, W.K.⁷

12
- 4444379304
- P-type doping and devices based on ZnO
- DOI 10.1002/pssb.200304271
- D. C. Look and B. Claflin, Phys. Status Solidi B 0370-1972 241, 624 (2004). 10.1002/pssb.200304271 (Pubitemid 39307766)
- (2004) Physica Status Solidi (B) Basic Research , vol.241 , Issue.3 , pp. 624-630
- Look, D.C.¹ Claflin, B.²

13
- 20844459633
- Study of the photoluminescence of phosphorus-doped p -type ZnO thin films grown by radio-frequency magnetron sputtering
- DOI 10.1063/1.1895480, 151917
- D. -K. Hwang, H. -S. Kim, J. -H. Lim, J. -Y. Oh, J. -H. Yang, S. -J. Park, K. -K. Kim, D. C. Look, and Y. S. Park, Appl. Phys. Lett. 0003-6951 86, 151917 (2005). 10.1063/1.1895480 (Pubitemid 40861407)
- (2005) Applied Physics Letters , vol.86 , Issue.15 , pp. 1-3
- Hwang, D.-K.¹ Kim, H.-S.² Lim, J.-H.³ Oh, J.-Y.⁴ Yang, J.-H.⁵ Park, S.-J.⁶ Kim, K.-K.⁷ Look, D.C.⁸ Park, Y.S.⁹

14
- 0003459529
- in, in edited by G. E. Muilenberg (Perkin Elmer, Eden Prairie, MN).
- C. D. Wagner, W. M. Riggs, L. E. Davis, J. F. Moulder, and G. E. Muilenberg, in Handbook of X-ray Photoelectron Spectroscopy, in edited by, G. E. Muilenberg, (Perkin Elmer, Eden Prairie, MN, 1979).
- (1979) Handbook of X-ray Photoelectron Spectroscopy
- Wagner, C.D.¹ Riggs, W.M.² Davis, L.E.³ Moulder, J.F.⁴ Muilenberg, G.E.⁵

15
- 58749097797
- 0026-2692, 10.1016/j.mejo.2008.07.037
- C. Y. Zhu, C. C. Ling, G. Brauer, W. Anwand, and W. Skorupa, Microelectron. J. 0026-2692 40, 286 (2009). 10.1016/j.mejo.2008.07.037
- (2009) Microelectron. J. , vol.40 , pp. 286
- Zhu, C.Y.¹ Ling, C.C.² Brauer, G.³ Anwand, W.⁴ Skorupa, W.⁵

16
- 44849089585
- 0003-6951, 10.1063/1.2940204
- Q. L. Gu, Appl. Phys. Lett. 0003-6951 92, 222109 (2008). 10.1063/1.2940204
- (2008) Appl. Phys. Lett. , vol.92 , pp. 222109
- Gu, Q.L.¹

17
- 0003903556
- R. Krause-Rehberg and H. S. Leipner, in, (Springer, Berlin).
- R. Krause-Rehberg, and, H. S. Leipner, in Positron Annihilation in Semiconductors: Defect Studies, (Springer, Berlin, 1999).
- (1999) Positron Annihilation in Semiconductors: Defect Studies

18
- 0004124717
- edited by P. Coleman (World Scientific, Singapore).
- Positron Beams and Their Applications, edited by, P. Coleman, (World Scientific, Singapore, 2000).
- (2000) Positron Beams and Their Applications

* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.