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Volumn 50, Issue 1 PART 2, 2011, Pages
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Residual strain evaluation by cross-sectional micro-reflectance spectroscopy of freestanding GaN grown by hydride vapor phase epitaxy
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Author keywords
[No Author keywords available]
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Indexed keywords
AS-GROWN;
CROSS-SECTION AREA;
DEPTH PROFILE;
ELASTIC THEORY;
FREESTANDING GAN;
FREESTANDING GAN SUBSTRATES;
GAN ISLANDS;
GROWTH DIRECTIONS;
HYDRIDE VAPOR PHASE EPITAXY;
IN-PLANE;
INTRINSIC STRAIN;
LOW TEMPERATURES;
REFLECTANCE SPECTROSCOPY;
RESIDUAL STRAINS;
THREADING DISLOCATION DENSITIES;
THREE-DIMENSIONAL (3D);
EPITAXIAL GROWTH;
GALLIUM ALLOYS;
GALLIUM NITRIDE;
REFLECTION;
RESIDUAL STRESSES;
SEMICONDUCTING GALLIUM COMPOUNDS;
SINGLE CRYSTALS;
SPECTROSCOPY;
SUBSTRATES;
THREE DIMENSIONAL;
VAPOR PHASE EPITAXY;
VAPORS;
FILM GROWTH;
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EID: 79955154508
PISSN: 00214922
EISSN: 13474065
Source Type: Journal
DOI: 10.1143/JJAP.50.01AC01 Document Type: Conference Paper |
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Times cited : (7)
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References (9)
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