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Materials Science Forum

Volumn 679-680, Issue , 2011, Pages 370-373

Electrically detected ESR study of interface defects in 4H-SiC metal-oxide-semiconductor field effect transistor

(7) Umeda, T a Esaki, K a Kosugi, Ryouji b Fukuda, Kenji b Morishita, Norio c Oshima, Takeshi c Isoya, Junichi a

a UNIVERSITY OF TSUKUBA (Japan)

b NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY AIST (Japan)

c JAPAN ATOMIC ENERGY AGENCY (Japan)

Author keywords

4H SiC mosfet; Dangling bond; EDMR; ESR; Hydrogen

Indexed keywords

DANGLING BONDS; DEFECTS; ELECTRIC FIELD EFFECTS; ELECTRON SPIN RESONANCE SPECTROSCOPY; HYDROGEN; MAGNETIC MOMENTS; METALS; MOS DEVICES; MOSFET DEVICES; OXIDE SEMICONDUCTORS; PARAMAGNETIC RESONANCE; SILICA; SILICON CARBIDE; SILICON OXIDES; WIDE BAND GAP SEMICONDUCTORS;

4H-SIC MOSFET; CHARACTERIZATION TECHNIQUES; EDMR; ELECTRICALLY ACTIVE DEFECTS; HYDROGEN ANNEALING; HYPERFINE SPLITTINGS; INTERFACE DEFECTS; INTERFACE REGIONS;

SEMICONDUCTING SILICON COMPOUNDS;

EID: 79955121576 PISSN: 02555476 EISSN: 16629752 Source Type: Book Series
DOI: 10.4028/www.scientific.net/MSF.679-680.370 Document Type: Conference Paper

Times cited : (12)

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