Origin of gap states at initial stage oxidation on Si(001)2×1:H and water adsorption on Si(001)2×1: A theoretical study

Applied Physics Letters

Volumn 81, Issue 10, 2002, Pages 1827-1829

  Nishida, Masahiko ^a  

^a KANAZAWA INSTITUTE OF TECHNOLOGY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

GAP STATE; INITIAL STAGES; SI(0 0 1); SI-O-SI BOND; SURFACE DANGLING BONDS; SURFACE STATE; THEORETICAL STUDY; TIGHT BINDING METHODS; WATER ADSORPTION;

ADSORPTION; DANGLING BONDS; DEWATERING;

SILICON;

EID: 79956030373     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1505123     Document Type: Article

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