Effect of deposition temperature on the properties of CeO2 films grown by atomic layer deposition

Thin Solid Films

Volumn 519, Issue 13, 2011, Pages 4192-4195

  King, P J ^a   Werner, M ^a   Chalker, P R ^a   Jones, A C ^a   Aspinall, H C ^a   Basca, J ^a   Wrench, J S ^a   Black, K ^a   Davies, H O ^b   Heys, P N ^b  

^a UNIVERSITY OF LIVERPOOL   (United Kingdom)

^b SAFC Hitech   (United Kingdom)

Author keywords

Atomic layer deposition; Cerium oxide; High dielectric constant materials; Raman spectroscopy; Thin films; X ray diffraction

Indexed keywords

ALKOXIDE PRECURSOR; AS-DEPOSITED FILMS; CERIUM OXIDES; DEPOSITION TEMPERATURES; FIRST-ORDER; FLUORITE STRUCTURE; FREQUENCY DEPENDENCIES; HALF-WIDTH; HIGH DIELECTRIC CONSTANT MATERIALS; HOMOLEPTIC; METHOXY; MICRO-STRUCTURAL; N TYPE SILICON; RAMAN LINES; TETRAKIS; WATER VAPOUR;

ATOMIC LAYER DEPOSITION; ATOMIC SPECTROSCOPY; ATOMS; CERIUM; CERIUM COMPOUNDS; CRYSTALLITE SIZE; DEPOSITION; DIFFRACTION; FILM GROWTH; OXIDE FILMS; OXIDES; PERMITTIVITY; RAMAN SCATTERING; RAMAN SPECTROSCOPY; THIN FILMS; VAPOR DEPOSITION; X RAY DIFFRACTION; X RAY DIFFRACTION ANALYSIS; X RAYS;

DIELECTRIC MATERIALS;

EID: 79954450852     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2011.02.025     Document Type: Article

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