Characteristics of high Al-content AlGaN/AlN quantum wells fabricated by modified migration enhanced epitaxy

Physica Status Solidi (C) Current Topics in Solid State Physics

Volumn 7, Issue 7-8, 2010, Pages 2111-2114

  Banal, Ryan G ^a   Funato, Mitsuru ^a   Kawakami, Yoichi ^a  

^a KYOTO UNIVERSITY   (Japan)

Author keywords

AlGaN AlN; Growth; Photoluminescence; Quantum wells; Structure

Indexed keywords

ACTIVE LAYER; AL CONTENT; AL INCORPORATION; ALGAN; ALGAN/ALN; ALN BARRIERS; DEEP LEVEL EMISSION; EMISSION WAVELENGTH; GROUP III; GROWTH; HIGH QUALITY; INTERNAL QUANTUM EFFICIENCY; LOW TEMPERATURES; MIGRATION ENHANCED EPITAXY; MULTIPLE QUANTUM WELLS; PHOTOLUMINESCENCE SPECTRUM; QUANTUM WELL; ROOM TEMPERATURE; STRUCTURE; TRIMETHYL GALLIUM; TRIMETHYLALUMINUM; X-RAY DIFFRACTION SATELLITES;

ALUMINUM; EPITAXIAL GROWTH; FABRICATION; NITRIDES; PHOTOLUMINESCENCE; SEMICONDUCTOR GROWTH; X RAY DIFFRACTION;

SEMICONDUCTOR QUANTUM WELLS;

EID: 77955839668     PISSN: 18626351     EISSN: 16101642     Source Type: Journal    
DOI: 10.1002/pssc.200983609     Document Type: Conference Paper

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