Milliwatt power 270 nm-band AlGaN deep-UV LEDs fabricated on ELO-AlN templates

Physica Status Solidi (C) Current Topics in Solid State Physics

Volumn 6, Issue SUPPL. 2, 2009, Pages

  Hirayama, Hideki ^a,b,c   Norimatsu, Jun ^a,b,c   Noguchi, Norimichi ^a,b,c   Fujikawa, Sachie ^a,b,c   Takano, Takayoshi ^a,d   Tsubaki, Kenji ^a,d   Kamata, Norihiko ^b,c  

^a RIKEN   (Japan)

^b SAITAMA UNIVERSITY   (Japan)

^c JAPAN SCIENCE AND TECHNOLOGY AGENCY   (Japan)

^d PANASONIC CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ALGAN; ALN; ALN LAYERS; ALN-LAYER GROWN; CW OPERATION; DEEP-UV; EMISSION WAVELENGTH; EPITAXIAL LATERAL OVERGROWTH; GROWTH METHOD; LOW-PRESSURE METAL-ORGANIC CHEMICAL VAPOR DEPOSITIONS; LP-MOCVD; MAXIMUM OUTPUT POWER; MULTIQUANTUM WELLS; POWER OPERATION; ROOM TEMPERATURE; STRIPE STRUCTURE; THREADING DISLOCATION DENSITIES; TRANSMISSION ELECTRON MICROSCOPE;

EDGE DISLOCATIONS; EPITAXIAL GROWTH; FABRICATION; LIGHT EMITTING DIODES; METALLORGANIC CHEMICAL VAPOR DEPOSITION; ORGANIC CHEMICALS; ORGANIC LIGHT EMITTING DIODES (OLED); SAPPHIRE; TRANSMISSION ELECTRON MICROSCOPY;

SEMICONDUCTOR QUANTUM WELLS;

EID: 79251628572     PISSN: 18626351     EISSN: 16101642     Source Type: Journal    
DOI: 10.1002/pssc.200880959     Document Type: Article

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