Rapid dislocation-related D1-photoluminescence imaging of multicrystalline Si wafers at room temperature

Physica Status Solidi (A) Applications and Materials Science

Volumn 208, Issue 4, 2011, Pages 888-892

  Schmid, R P ^a,b   Mankovics, D ^b   Arguirov, T ^a,b   Ratzke, M ^b   McHedlidze, T ^b   Kittler, M ^a,b  

^a IHP   (Germany)

^b BRANDENBURG UNIVERSITY OF TECHNOLOGY   (Germany)

Author keywords

dislocations; imaging; photoluminescence; silicon

Indexed keywords

CHARACTERIZATION TECHNIQUES; DISLOCATIONS; HOMOGENEOUS ILLUMINATION; IMAGING; IN-LINE WAFER; MULTICRYSTALLINE SI; MULTICRYSTALLINE SILICON WAFERS; NOVEL METHODS; PHOTOLUMINESCENCE IMAGING; PHOTOLUMINESCENCE MAPPING; ROOM TEMPERATURE; SPATIALLY RESOLVED;

PHOTOLUMINESCENCE; POLYSILICON; SEMICONDUCTING SILICON COMPOUNDS;

SILICON WAFERS;

EID: 79954428509     PISSN: 18626300     EISSN: 18626319     Source Type: Journal    
DOI: 10.1002/pssa.201026269     Document Type: Article

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