Novel imaging techniques for dislocation-related D1-photo-luminescence of multicrystalline Si wafers - two different approaches

Physica Status Solidi (C) Current Topics in Solid State Physics

Volumn 8, Issue 4, 2011, Pages 1297-1301

  Schmid, R P ^a,b   Mankovics, D ^b   Arguirov, T ^a,b   Mchedlidze, T ^b   Kittler, M ^a,b  

^a IHP   (Germany)

^b BRANDENBURG UNIVERSITY OF TECHNOLOGY   (Germany)

Author keywords

D1 line; Dislocation; Imaging; Photoluminescence; Silicon

Indexed keywords

CELL PRODUCTION; D1 LINE; DISLOCATION; HOMOGENEOUS ILLUMINATION; IMAGING; IN-LINE; LASER-BASED METHODS; MULTICRYSTALLINE SI; MULTICRYSTALLINE SOLAR CELLS; NOVEL IMAGING TECHNIQUES; PHOTOLUMINESCENCE IMAGING; ROOM TEMPERATURE; SPATIALLY RESOLVED;

DIODES; IMAGING TECHNIQUES; LIGHT EMITTING DIODES; PHOTOLUMINESCENCE; POLYSILICON; PULSED LASERS; SILICON WAFERS; SOLAR CELLS;

SEMICONDUCTING SILICON COMPOUNDS;

EID: 79953740466     PISSN: 18626351     EISSN: 16101642     Source Type: Journal    
DOI: 10.1002/pssc.201084023     Document Type: Article

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