Roughening of silicon (1 0 0) surface during low energy Cs+ ion bombardment

Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

Volumn 269, Issue 9, 2011, Pages 905-908

  Mansilla, C ^a   Philipp, P ^a   Wirtz, T ^a  

^a LUXEMBOURG INSTITUTE OF SCIENCE AND TECHNOLOGY   (Luxembourg)

Author keywords

AFM; Bombardment; Cesium; Roughening; Silicon; SIMS

Indexed keywords

AFM; AMBIENT TEMPERATURES; BEAM DIRECTION; BOMBARDMENT; CORRELATION LENGTHS; DEPTH RESOLUTION; EXPERIMENTAL CONDITIONS; ION FLUENCES; ION FLUXES; LOW ENERGIES; PERPENDICULAR ORIENTATION; RIPPLE FORMATION; ROUGHENING; SAMPLE ROTATION; SIMS; SURFACE-ROUGHENING; ULTRA SHALLOW JUNCTION;

ATOMIC FORCE MICROSCOPY; CESIUM; IONS; ROTATION; SECONDARY ION MASS SPECTROMETRY; SURFACE ROUGHNESS;

ION BOMBARDMENT;

EID: 79953763458     PISSN: 0168583X     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.nimb.2010.11.063     Document Type: Conference Paper

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