Fundamentals and technology for monolithically integrated RF MEMS switches with ultra-nanocrystalline diamond dielectric/CMOS devices

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 7679, Issue , 2010, Pages

  Auciello, O ^a   Sumant, A V ^a   Goldsmith, C ^b   O'Brien, S ^b   Sampath, S ^c   Gudeman, C ^c   Wang, W ^d   Hwang, J C M ^d   Swonger, J ^e   Carlisle, J A ^f   Balachandran, S ^a   Mancini, D C ^a  

^a ARGONNE NATIONAL LABORATORY   (United States)

^b MEMtronics Inc   (United States)

^c Innovative Micro Technology   (United States)

^d LEHIGH UNIVERSITY   (United States)

^e Peregrine Semiconductor   (United States)

^f ADVANCED DIAMOND TECHNOLOGIES INC   (United States)

Author keywords

MEMS NEMS devices; thin films; RF MEMS switches; Ultrananocrystalline diamond

Indexed keywords

ATTRACTIVE FORCE; FAST DISCHARGES; MEMS RESONATORS; MEMS/NEMS; MONOLITHICALLY INTEGRATED; NANOCRYSTALLINE DIAMONDS; NCD FILMS; PREMATURE FAILURES; QUALITY FACTORS; RF-MEMS SWITCHES; ULTRA-NANOCRYSTALLINE DIAMOND; VAN DER WAALS; YOUNG'S MODULUS;

DIAMONDS; DIELECTRIC PROPERTIES; ELECTRIC SWITCHES; MICROELECTROMECHANICAL DEVICES; MONOLITHIC INTEGRATED CIRCUITS; NANOCRYSTALLINE MATERIALS; NANOTECHNOLOGY; SENSORS; SILICON; SILICON COMPOUNDS; THIN FILMS; VAN DER WAALS FORCES;

DIELECTRIC MATERIALS;

EID: 79953749747     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.851491     Document Type: Conference Paper

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