Charging characteristics of ultra-nano-crystalline diamond in RF MEMS capacitive switches

IEEE MTT-S International Microwave Symposium Digest

Volumn , Issue , 2010, Pages 1246-1249

  Goldsmith, C ^a   Sumant, A ^b   Auciello, O ^b   Carlisle, J ^c   Zeng, H ^c   Hwang, J C M ^d   Palego, C ^d   Wang, W ^d   Carpick, R ^f   Adiga, V P ^f   Datta, A ^e   Gudeman, C ^e   O'Brien, S ^a   Sampath, S ^e  

^a MEMtronics Inc   (United States)

^b ARGONNE NATIONAL LABORATORY   (United States)

^c Advanced Diamond Technology   (United States)

^d LEHIGH UNIVERSITY   (United States)

^e Innovative Micro Technology   (United States)

^f UNIVERSITY OF PENNSYLVANIA   (United States)

Author keywords

Dielectric charging; MEMS switch; Reliability; RF MEMS; Ultra nano crystalline diamond

Indexed keywords

ADVERSE EFFECT; CHARGING CHARACTERISTICS; CONVENTIONAL MATERIALS; DIELECTRIC CHARGING; ELECTROMECHANICAL PERFORMANCE; MEMS SWITCH; MEMS SWITCHES; ORDERS OF MAGNITUDE; RF MEMS CAPACITIVE SWITCHES; RF-MEMS; TIME CONSTANTS; ULTRANANOCRYSTALLINE DIAMONDS;

CRYSTALLINE MATERIALS; DIAMONDS; ELECTRIC CHARGE; RELIABILITY;

ELECTRIC SWITCHES;

EID: 77957796115     PISSN: 0149645X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/MWSYM.2010.5518076     Document Type: Conference Paper

References (9)

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