Analytical electron microscopy investigation of elemental composition and bonding structure at the Sb-doped Ni-fully-silicide/SiO2 interface

Journal of Applied Physics

Volumn 109, Issue 6, 2011, Pages

  Kawasaki, Naohiko ^a   Sugiyama, Naoyuki ^a   Otsuka, Yuji ^a   Hashimoto, Hideki ^a   Kurata, Hiroki ^b   Isoda, Seiji ^b  

^a TORAY RESEARCH CENTER INC   (Japan)

^b KYOTO UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ANALYTICAL ELECTRON MICROSCOPY; BONDING STRUCTURE; EDGE SPECTRA; ELEMENTAL COMPOSITIONS; ENERGY DISPERSIVE X RAY SPECTROSCOPY; GATE ELECTRODES; HIGH SPATIAL RESOLUTION; METAL-OXIDE-SEMICONDUCTOR TRANSISTOR; NATIVE OXIDES; NICKEL LAYERS; SB-DOPED; SCANNING TRANSMISSION ELECTRON MICROSCOPES; SI ATOMS; SILICIDE GATE;

ATOMIC SPECTROSCOPY; GATE DIELECTRICS; GATES (TRANSISTOR); POLYSILICON; SILICIDES; SILICON OXIDES; TRANSMISSION ELECTRON MICROSCOPY; X RAY SPECTROSCOPY;

ELECTRON ENERGY LOSS SPECTROSCOPY;

EID: 79953673076     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3561370     Document Type: Article

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