Dielectric and optical properties of nanometric nickel silicides from valence electrons energy-loss spectroscopy experiments

Micron

Volumn 37, Issue 5, 2006, Pages 377-384

  Cheynet, M C ^a   Pantel, R ^b  

^a UNIV GRENOBLE ALPES   (France)

^b STMICROELECTRONICS   (France)

Author keywords

Dielectic properties; Dielectric thin film; Electron Energy Loss Spectroscopy (EELS); Nickel silicides; Optical properties

Indexed keywords

ABSORPTION; COMPOSITION; DIELECTRIC PROPERTIES; ELECTRON ENERGY LOSS SPECTROSCOPY; ELLIPSOMETRY; NANOSTRUCTURED MATERIALS; NICKEL COMPOUNDS; OPTICAL PROPERTIES;

DIELECTRIC FUNCTION; DIELECTRIC THIN FILM; NICKEL SILICIDES; SINGLE SCATTERING SPECTRA; VEELS;

THIN FILMS;

EID: 33744947843     PISSN: 09684328     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.micron.2006.01.009     Document Type: Article

References (32)

1. Aimé D., Froment B., and Cacho F. Work Function Tuning Through Dopant Scanning and Related Effects on Ni Fully Silicided Gate for sub-45 nm Nodes CMOS (2004), IEDM, San Fransisco, CA
2. Amiotti M., Borghesi A., Guizzetti G., and Nava F. Optical properties of polycrystalline nickel silicides. Phys. Rev. B 42 (1990) 8939-8946
3. Ashcroft N.W., and Mermin N.D. Solid State Physics (1976), Brooks Cole
4. Bisi O., and Calandra C. Transition metal silicides: aspect of the chemical bond and trends in the electronic structure. J. Phys. C: Solid State Phys. 14 (1981) 5479-5494
5. Bisi O., Calandra C., Del Pennino U., Sassaroli P., and Valeri S. Correlation effects in valence band spectra of nickel silicides. Phys. Rev. B 30 (1984) 5696-5703
6. Bortz M.L., and French R.H. Quantitative FFT-based Kramers-Kronig analysis for reflectance data. Appl. Spectrosc. 43 (1989) 1498
7. 2. Phys. Rev. B 26 (1982) 6379-6383
8. 2. Phys. Rev. B 25 (1982) 7598-7602
9. Chen H.W., and Lue J.T. Ellipsometry measurements of nickel silicides. J. Appl. Phys. 59 6 (1986) 2165-2167
10. 2Si and NiSi formation measured over a wide range of ramp rates. Thin Film Solid 279 (1996) 193-198
11. 2. Phys. Rev. B 34 4 (1986) 2875-2877
12. Denoyer, L., French, R., 1996. Electronic structure tool (EST) software. Deconvolution and Entropy Consulting, 755 Snyder Hill Road, Ithaca, NY, USA (www.deconvolution.com/), developed under Gram 32, Galactic Industries, (1996), 325 Main Street, Salem, NH 03079, USA.
13. Dorneich A.D., French R.H., Müllejans H., Loughin S., and Rhüle M. Quantitative analysis of valence electron energy-loss spectra of aluminium nitride. J. Microsc. 191 (1998) 286
14. Egerton, R.F., 1996. Electron Energy-Loss Spectroscopy in the Electron Microscope. 2nd Edition, Plenum Press, New-York. A Division of plenum publishing corporation. 233 Spring Street, NY 10013.
15. Elab H., and Kosonocky W.F. The photoresponse of thin film PtSi schottky barrier detector with optical cavity. RCA Rev. 43 (1982) 568-574
16. 2. Phys. Rev. B 26 (1982) 546-552
17. Froment, B., Muller, M., Brut, H., Pantel, R., Carron, V., Achard, H., Halimaoui, A., Boeuf, F., Wacquant, F., Regnier, C., Ceccarelli, D., Palla, R., et al., 2003. Nickel vs. Cobalt Silicide integration for sub-50 nm CMOS. ESSDERC 2003 Proceedings, 33rd European Solid State Device Research Conference (Estoril-Portugal, 2003) CD Diffusion.
18. Johnson D.W. A Fourier series method for numerical Kramers-Kronig analysis. J. Appl. Phys. 61 (1975) 574
19. 2. Phys. Rev. B 31 (1985) 3460-3468
20. Kurianski J., van Damme J., Vermeiren J., Maex K., and Claeys C. Nickel silicide Schottky barrier detectors for short wavelength infrared applications. Infrared detectors and focal plane arrays. Proceedings of the Meeting, April 18-19, Orlando, FL (A91-36726 15-35) (1990), Society of Photo-Optical Instrumentation Engineers, Bellingham, WA pp. 27-35
21. Lavoie C., d'Heurle F.M., Detavernier C., and Cabral C. Towards implementation of a nickel silicide process for CMOS technologies. Microelectron. Eng. 70 (2003) 144-157
22. Morimoto T., Ohguro T., Momose H.S., Iinuma T., Kunishima I., Suguro K., Katakabe I., Nakajima H., Tsuchiaki M., Ono M., Katsumata Y., and Iwai H. Self aligned nickel-mono-silicide technology for high-speed deep submicrometer logic CMOS ULSI. IEEE Trans. Electron Devices 42 (1995) 915-922
23. Muller D., Batson P., and Silcox J. Measurements and models of electron energy loss spectroscopy core-level shifts in nickel aluminium intermetallics. Phys. Rev. B 58 18 (1998) 11970-11981
24. Nicolet M.A., and Lau S.S. In: Einspruch N.G., and Larrabee G.B. (Eds). VLSI Electronics: Microstructure Science vol. 6 (1983), Academic Press, New York 1
25. Ottaviani G., Tu K.N., and Mayer J.W. Barrier heights and silicide formation for Ni, Pd and Pt on silicon. Phys. Rev. B 24 (1981) 3354-3359
26. Pomoni K., and Krontiras C. Electrical transport properties in nickel monosilicide thin films. J. Appl. Phys. 21 (1988) 780-783
27. Rather H. Excitation of plasmons and interband transitions by electrons. Springer Tracts in Modern Physics vol. 38 (1980), Springer, Berlin
28. 2) Polysilicon: A Novel Approach to Very Low-resistive Gate (2 Ohm/sq.) without Metal CMP or Etching (2001), IEDM, Washington p. 825
29. Tirani M., Mueller A., Gao Y., Irene E., Hu Y., and Tay S. In-situ real-time studies of nickel silicide phase formation. J. Vac. Sci. Technol., B 19 2 (2001) 376-383
30. Vignier, C., 1987. PhD Université Aix-Marseille, France.
31. 2/Si (111) Interface. PhD Thesis, Cornell University, Ithaca NY.
32. Xuan P., and Bokor J. Investigation of NiSi and TiSi as CMOS gate materials. IEEE Electron Device Lett. 24 10 (2003) 634-636