P-type doping with group-I elements and hydrogenation effect in ZnO

Physica B: Condensed Matter

Volumn 376-377, Issue 1, 2006, Pages 707-710

  Lee, Eun Cheol ^a   Chang, K J ^b  

^a SAMSUNG Electronics   (South Korea)

^b Korea Advanced Institute of Science and Technology (KAIST)   (South Korea)

Author keywords

First principles calculations; Lithium; P type doping; Zinc oxide

Indexed keywords

ANNEALING; CALCULATIONS; DOPING (ADDITIVES); ELECTRIC CONDUCTIVITY; LITHIUM; SODIUM; ZINC OXIDE;

CODOPING TECHNIQUE; FIRST-PRINCIPLES CALCULATIONS; GROUP-I ELEMENTS; HYDROGEN-PASSIVATED ACCEPTORS; HYDROGENATION EFFECT IN ZNO; INTERSTITIAL DONORS; P-TYPE DOPING; SHALLOWER ACCEPTOR LEVELS;

HYDROGENATION;

EID: 33645134316     PISSN: 09214526     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.physb.2005.12.177     Document Type: Conference Paper

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