InGaN super-lattice growth for fabrication of quantum dot containing microdisks

Journal of Crystal Growth

Volumn 321, Issue 1, 2011, Pages 113-119

  El Ella, H A R ^a   Rol, F ^b   Collins, D P ^c   Kappers, M J ^a   Taylor, R A ^c   Hu, E L ^b   Oliver, R A ^a  

^a UNIVERSITY OF CAMBRIDGE   (United Kingdom)

^b HARVARD UNIVERSITY   (United States)

^c UNIVERSITY OF OXFORD   (United Kingdom)

Author keywords

A1. Critical stack thickness; A1. Dislocations; A3. Metalorganic vapour phase epitaxy; B1. Nitrides; B2. InGaN quantum dots; B3. Microdisks

Indexed keywords

A1. CRITICAL STACK THICKNESS; A1. DISLOCATIONS; B1. NITRIDES; B2. INGAN QUANTUM DOTS; B3. MICRODISKS; METAL-ORGANIC VAPOUR PHASE EPITAXY;

EPITAXIAL GROWTH; GALLIUM COMPOUNDS; NITRIDES; SEMICONDUCTOR QUANTUM WELLS; VAPOR PHASE EPITAXY;

SEMICONDUCTOR QUANTUM DOTS;

EID: 79953244238     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2011.02.012     Document Type: Article

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