Analytical solution to Matthews' and Blakeslee's critical dislocation formation thickness of epitaxially grown thin films

Journal of Crystal Growth

Volumn 241, Issue 1-2, 2002, Pages 231-234

  Braun, A ^a,d   Briggs, K M ^b   Boni P ^c  

^a LAWRENCE BERKELEY NATIONAL LABORATORY   (United States)

^b MARTLESHAM HEATH   (United Kingdom)

^c TECHNICAL UNIVERSITY OF MUNICH   (Germany)

^d UNIVERSITY OF KENTUCKY   (United States)

Author keywords

A1. Computer simulation; A1. Critical thickness; A1. Defects; A2. Growth models; A3. Atomic layer epitaxy

Indexed keywords

COMPUTER SIMULATION; DISLOCATIONS (CRYSTALS); EPITAXIAL GROWTH; SINGLE CRYSTALS;

ATOMIC LAYER EPITAXY;

THIN FILMS;

EID: 0036565856     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(02)00941-7     Document Type: Article

References (9)

1. Analytical solution to a growth problem with two moving boundaries