Role of Fe3O4 as a p-dopant in improving the hole injection and transport of organic light-emitting devices

IEEE Journal of Quantum Electronics

Volumn 47, Issue 5, 2011, Pages 591-596

  Zhang, Dan Dan ^a   Feng, Jing ^a   Chen, Lu ^a   Wang, Hai ^a   Liu, Yue Feng ^a   Jin, Yu ^a   Bai, Yu ^a   Zhong, Yu Qing ^a   Sun, Hong Bo ^a  

^a JILIN UNIVERSITY   (China)

Author keywords

Fe3O4; organic light emitting devices; p dopant

Indexed keywords

CHARGE TRANSFER COMPLEX; FE3O4; HOLE INJECTION; HOLE INJECTION BARRIERS; HOLE TRANSPORTS; HOST MATERIALS; NEAR-INFRARED ABSORPTION; ORGANIC LIGHT-EMITTING DEVICES; P-DOPANT; TRIPHENYL AMINES;

ABSORPTION SPECTROSCOPY; CHARGE TRANSFER; CURRENT DENSITY; ELECTRON INJECTION; HOLE MOBILITY; ION EXCHANGE; LIGHT EMISSION; PHOSPHORUS; ULTRAVIOLET PHOTOELECTRON SPECTROSCOPY; X RAY PHOTOELECTRON SPECTROSCOPY;

DOPING (ADDITIVES);

EID: 79953204627     PISSN: 00189197     EISSN: None     Source Type: Journal    
DOI: 10.1109/JQE.2011.2107503     Document Type: Article

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