Characterization of copper electromigration dependence on selective chemical vapor deposited cobalt capping layer thickness

IEEE Electron Device Letters

Volumn 32, Issue 4, 2011, Pages 560-562

  Yang, C C ^a   Baumann, F ^b   Wang, P C ^b   Lee, Sy ^c   Ma, P ^c   Aubuchon, J ^c   Edelstein, D ^a  

^a IBM RESEARCH   (United States)

^b IBM MICROELECTRONICS   (United States)

^c APPLIED MATERIALS INC   (United States)

Author keywords

Chemical vapor deposition; Cobalt; reliability

Indexed keywords

CAPPING LAYER; CHEMICAL VAPOR DEPOSITED; CO CONTROL; CO DEPOSITION; CO FILMS; COPPER ELECTROMIGRATION; DEPOSITION PRESSURES; DIELECTRIC SURFACE; LIFETIME ENHANCEMENT; RESISTANCE ENHANCEMENT; VAPOR-DEPOSITION TECHNIQUES;

CHEMICAL VAPOR DEPOSITION; COPPER; ELECTROMIGRATION; VAPORS;

COBALT;

EID: 79953051560     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2011.2108260     Document Type: Article

References (8)

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