Characterization of selectively deposited cobalt capping layers: Selectivity and electromigration resistance

IEEE Electron Device Letters

Volumn 31, Issue 7, 2010, Pages 728-730

  Yang, C C ^a,b   Flaitz, P ^c   Wang, P C ^c   Chen, F ^a   Edelstein, D ^a  

^a IBM RESEARCH   (United States)

^b IBM Microelectronics ^*

^c IBM MICROELECTRONICS   (United States)

Author keywords

Chemical vapor deposition; cobalt; reliability

Indexed keywords

[CO/CU]; CAPPING LAYER; CO DEPOSITION; CO FILMS; DEPOSITION TEMPERATURES; ELECTROMIGRATION RESISTANCE; INTERFACIAL PROPERTY; SUBSTRATE MATERIAL; TIME DEPENDENT DIELECTRIC BREAKDOWN; VAPOR-DEPOSITION TECHNIQUES; X RAY FLUORESCENCE SPECTROSCOPY;

CHEMICAL VAPOR DEPOSITION; COPPER; DEPOSITION; ELECTROMIGRATION; FLUORESCENCE SPECTROSCOPY; OXYGEN;

COBALT;

EID: 77954144621     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2010.2048298     Document Type: Article

References (5)

1. J. Tao, N. W. Cheung, and C. Hu, "Electromigration characteristics of copper interconnects," IEEE Electron Device Lett., vol.14, no.5, pp. 249-251, May 1993.
2. J. R. Lloyd, M. W. Lane, E. G. Liniger, C.-K. Hu, T. M. Shaw, and R. Rosenberg, "Electromigration and adhesion," IEEE Trans. Device Mater. Rel., vol.5, no.1, pp. 113-118, Mar. 2005.
3. M. Tagami, N. Furutake, N. Inoue, E. Nakazawa, K. Arita, and Y. Hayashi, "Highly-reliable molecular-pore-stack (MPS)-SiOCH/Cu interconnects with CoWB metal-cap films," in Proc. IEEE Int. Interconnect Technol. Conf., 2009, pp. 11-13.
4. C.-C. Yang, F. R. McFeely, P.-C. Wang, K. Chanda, and D. C. Edelstein, "Selective chemical vapor deposition-grown Ru for Cu interconnect capping applications," Electrochem. Solid-State Lett., vol.13, no.5, pp. D33-D35, Mar. 2010.
5. S. Y. Chang, C. C. Wan, and Y. Y. Wang, "Selectivity enhancement of elec-troless Co deposition for Cu capping process via spontaneous diazonium ion reduction," Electrochem. Solid-State Lett., vol.10, no.5, pp. D43-D46, Feb. 2007.