Changes of optical, dielectric, and structural properties of Si 15Sb85 phase change memory thin films under different initializing laser power

Journal of Alloys and Compounds

Volumn 509, Issue 16, 2011, Pages 5050-5054

  Huang, Huan ^a   Zhang, Lei ^b   Wang, Yang ^a   Han, Xiao Dong ^b   Wu, Yiqun ^a   Zhang, Ze ^b,c   Gan, Fuxi ^a  

^a SHANGHAI INSTITUTE OF OPTICS AND FINE MECHANICS   (China)

^b BEIJING UNIVERSITY OF TECHNOLOGY   (China)

^c ZHEJIANG UNIVERSITY   (China)

Author keywords

Dielectric function; Optical constant; SiSb phase change film; TEM

Indexed keywords

ABSORPTION COEFFICIENTS; AMORPHOUS PHASE; ATOMIC ARRANGEMENT; COMPLEX REFRACTIVE INDEX; CRYSTALLINE STRUCTURE; DIELECTRIC CONSTANTS; DIELECTRIC FUNCTIONS; LASER POWER; PHASE CHANGE FILMS; PHASE CHANGE MECHANISMS; STRUCTURAL CHANGE; STRUCTURAL CHARACTERISTICS; SUBNANOMETER RESOLUTION; TEM;

ANTIMONY; HIGH RESOLUTION TRANSMISSION ELECTRON MICROSCOPY; OPTICAL CONSTANTS; REFRACTIVE INDEX; SPECTROSCOPIC ELLIPSOMETRY; THIN FILMS;

PHASE CHANGE MEMORY;

EID: 79953031413     PISSN: 09258388     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jallcom.2011.02.031     Document Type: Article

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