Te-free SiSb phase change material for high data retention phase change memory application

Japanese Journal of Applied Physics, Part 2: Letters

Volumn 46, Issue 25-28, 2007, Pages

  Zhang, Ting ^b   Song, Zhitang ^a   Wang, Feng ^a   Liu, B O ^a   Feng, Songlin ^a   Chen, Bomy ^c  

^a SHANGHAI INSTITUTE OF MICROSYSTEM AND INFORMATION TECHNOLOGY   (China)

^b INSTITUTE OF GEOLOGY AND GEOPHYSICS   (China)

^c SILICON STORAGE TECHNOLOGY INC   (United States)

Author keywords

Data retention; Phase change; Phase change memory; SiSb; Te free

Indexed keywords

ACTIVATION ENERGY; CHALCOGENIDES; CRYSTALLIZATION; SILICON COMPOUNDS;

CRYSTALLIZATION TEMPERATURE; DATA RETENTION; SILICON ATOMIC CONTENT;

PHASE CHANGE MATERIALS;

EID: 34547850469     PISSN: 00214922     EISSN: 13474065     Source Type: Journal    
DOI: 10.1143/JJAP.46.L602     Document Type: Article

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