Ir/n-ZnO Schottky barrier ultraviolet photodiodes

IEEE Sensors Journal

Volumn 11, Issue 5, 2011, Pages 1129-1133

  Young, S J ^a  

^a NATIONAL FORMOSA UNIVERSITY   (Taiwan)

Author keywords

Ir; photodiodes; Schottky; ultraviolet; ZnO

Indexed keywords

APPLIED BIAS; CONTACT ELECTRODES; DETECTIVITY; HIGH TEMPERATURE; IR; NOISE LEVELS; OXYGEN ANNEALING; REJECTION RATIOS; REVERSE CURRENTS; REVERSE LEAKAGE CURRENT; SCHOTTKY; SCHOTTKY BARRIERS; SCHOTTKY-BARRIER PHOTODIODE; THERMAL-ANNEALING; ULTRAVIOLET; ZNO;

ANNEALING; IRIDIUM; OXYGEN; PHOTODIODES; SCHOTTKY BARRIER DIODES;

ZINC OXIDE;

EID: 79952825662     PISSN: 1530437X     EISSN: None     Source Type: Journal    
DOI: 10.1109/JSEN.2010.2083649     Document Type: Article

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