PVT growth of GaN bulk crystals

Journal of Crystal Growth

Volumn 318, Issue 1, 2011, Pages 406-410

  Siche, D ^a   Gogova, D ^a   Lehmann, S ^a   Fizia, T ^a   Fornari, R ^a   Andrasch, M ^b   Pipa, A ^b   Ehlbeck, J ^b  

^a LEIBNIZ INSTITUTE FOR CRYSTAL GROWTH   (Germany)

^b LEIBNIZ INSTITUTE FOR PLASMA SCIENCE AND TECHNOLOGY   (Germany)

Author keywords

A1. Substrates; A2. Growth from vapor; A2. Single crystal growth; A3. Physical vapor deposition processes; B1. Nitrides; B2. Semiconducting III M materials

Indexed keywords

A1. SUBSTRATES; A2. SINGLE CRYSTAL GROWTH; A3. PHYSICAL VAPOR DEPOSITION PROCESSES; B1. NITRIDES; B2. SEMICONDUCTING III-M MATERIALS; GROWTH FROM VAPORS;

AMMONIA; CRYSTAL GROWTH; CRYSTALLIZATION; GALLIUM NITRIDE; NITROGEN; NITROGEN PLASMA; PHYSICAL VAPOR DEPOSITION; PLASMA SOURCES; PLASMA STABILITY; SINGLE CRYSTALS; VAPORS;

SEMICONDUCTOR GROWTH;

EID: 79952735407     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2010.10.030     Document Type: Conference Paper

References (19)

1. R. Dwilinski, R. Doradzinski, J. Garczynski, L.P. Sierzputowski, A. Puchalski, Y. Kanbara, K. Yagi, H. Minakuchi, and H. Hayashi J. Cryst. Growth 311 2009 3015
2. H.P. Maruska, and J.J. Tietjen Appl. Phys. Lett. 15 1969 327
3. K. Fujito, S. Kubo, H. Nagaoka, T. Mochizuki, H. Namita, and S. Nagao J. Cryst. Growth 311 2009 3011
4. R. Juza, and H. Hahn Z. Anorg. Allg. Chem. 239 1938 282
5. I. Rahinov, N. Ditzian, A. Goldman, and S. Cheskis Appl. Phys. B 77 2003 541
6. J. Völter, and M. Schön Z. Anorg. Allg. Chem. 322 1963 212
7. D. Gogova, G.Yu. Rudko, D. Siche, H.-J. Rost, R. Fornari, A new approach to grow C-doped GaN thick epitaxial layers, pssc.201001005.R1.
8. D.D. Koleske, A.E. Wickenden, R.L. Henry, J.C. Culbertson, M.E. Twigg,J. Cryst. Growth 223 (2001) 466
9. W.J. Mecouch, Z.J. Reitmeier, J.-S. Park, R.F. Davis, and Z. Sitar Phys. Status Solidi (c) 2 7 2005 2129
10. M. Imade, M. Kawahara, F. Kawamura, M. Yoshimura, Y. Mori, and T. Sasaki Mater. Lett. 59 2005 4026
11. M. Imade, H. Kishimoto, F. Kawamura, M. Yoshimura, Y. Kitaoka, T. Sasaki, and Y. Mori J. Cryst. Growth 312 2010 676
12. K. Jacobs, D. Siche, D. Klimm, H.-J. Rost, and D. Gogova J. Cryst. Growth 312 2010 750
13. 〈http://www.ansys.com/〉
14. 〈http://www.factsage.com/〉
15. N.N. Greenwood, and A. Earnshaw Chemistry of the Elements 1990 VCH Whily Weinheim
16. M. Leins, L. Alberts, M. Kaiser, M. Walker, A. Schulz, U. Schumacher, and U. Stroth Plasma Process. Polym. 6 2009 227
17. U. Krohmann, T. Neumann, J. Ehlbeck, K. Rackow, patent 2007, WIPO Pub.No WO/2007/028813.
18. J. Ehlbeck, R. Brandenburg, T. v. Woedtke, U. Krohmann, M. Stieber, K.-D. Weltmann, and G.M.S. Krankenhaushygiene Interdisziplinär 3 2008 1 〈 http://www.egms.de/static/en/journals/dgkh/2008-3/dgkh000112.shtml 〉
19. J. Ehlbeck, A. Ohl, M. Maass, U. Krohmann, and T. Neumann Surf. Coatings Technol. 174 2003 493