Growth of gallium nitride via iodine vapor phase growth

Physica Status Solidi C: Conferences

Volumn 2, Issue 7, 2005, Pages 2129-2132

  Mecouch, W J ^a   Reitmeier, Z J ^a   Park, J S ^a   Davis, R F ^a   Sitar, Z ^a  

^a North Carolina State University   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

AMMONIA; CRYSTAL ORIENTATION; IODINE; MICROSTRUCTURE; NITROGEN; OPTICAL MICROSCOPY; REACTION KINETICS; THIN FILMS; VAPOR PHASE EPITAXY;

GAL NOZZLE; GROWTH RATES; IODINE VAPOR PHASE EPITAXY SYSTEM; REACTANT GASSES;

GALLIUM NITRIDE;

EID: 27344447868     PISSN: 16101634     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1002/pssc.200461532     Document Type: Conference Paper

References (4)

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3. V. Tassev, D. Bliss, M. Suscavage, Q.S. Paduano, S-Q. Wang, and L. Bouthillette, J. Cryst. Growth 235, 140 (2002).
4. D.R. Stull, Ind. Eng. Chem. 39, 517 (1947).