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Physica Status Solidi (C) Current Topics in Solid State Physics

Volumn 8, Issue 7-8, 2011, Pages 2120-2122

A new approach to grow C-doped GaN thick epitaxial layers

(7) Gogova, D a Rudko, G Yu b Siche, D a Albrecht, M a Irmscher, K a Rost, H J a Fornari, R a

a LEIBNIZ INSTITUTE FOR CRYSTAL GROWTH (Germany)

b INSTITUTE OF SEMICONDUCTOR PHYSICS (Ukraine)

Author keywords

Doping; GaN:C; Pseudohalide vapour phase epitaxy

Indexed keywords

C-DOPED; CARBON CONCENTRATIONS; CRYSTALLINE QUALITY; FEEDING MATERIAL; GAN LAYERS; GAN:C; HIGH-RESOLUTION X-RAY DIFFRACTION; HRXRD; HYDROGEN CYANIDE; LOW TEMPERATURE PHOTOLUMINESCENCE; N-TYPE CONDUCTIVITY; ROCKING CURVES; ROOM TEMPERATURE; SPECTROSCOPY MEASUREMENTS; STRUCTURAL QUALITIES; TECHNOLOGICAL PROCESS; THICK EPITAXIAL LAYERS; THICK SAMPLES; TRANSPORT AGENT; VAPOUR PHASE EPITAXY; VAPOUR-PHASE; WURTZITES;

CRYSTALLINE MATERIALS; CYANIDES; EPITAXIAL GROWTH; GYRATORS; HALL EFFECT; RAMAN SCATTERING; RAMAN SPECTROSCOPY; SECONDARY ION MASS SPECTROMETRY; SEMICONDUCTOR QUANTUM WELLS; X RAY DIFFRACTION; X RAY DIFFRACTION ANALYSIS; ZINC SULFIDE;

GALLIUM NITRIDE;

EID: 79960702082 PISSN: 18626351 EISSN: 16101642 Source Type: Journal
DOI: 10.1002/pssc.201001005 Document Type: Article

Times cited : (13)

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