Pseudohalide vapour growth of thick GaN layers

Journal of Crystal Growth

Volumn 312, Issue 6, 2010, Pages 750-755

  Jacobs, K ^a   Siche, D ^a   Klimm, D ^a   Rost, H J ^a   Gogova, D ^a  

^a LEIBNIZ INSTITUTE FOR CRYSTAL GROWTH   (Germany)

Author keywords

A1. Thermodynamics; A2. Growth from vapour; A3. Vapour phase epitaxy; B1. Gallium compounds; B2. Semiconducting gallium compounds

Indexed keywords

A3. VAPOUR PHASE EPITAXY; B1. GALLIUM COMPOUNDS; B2. SEMICONDUCTING GALLIUM COMPOUNDS; GROWTH FROM VAPOUR; VAPOUR PHASE EPITAXY;

AMMONIA; CRYSTAL GROWTH; CRYSTALLINE MATERIALS; CYANIDES; GALLIUM ALLOYS; GALLIUM NITRIDE; GRAFTING (CHEMICAL); PYROLYSIS; REACTION KINETICS; SEMICONDUCTING GALLIUM; SEMICONDUCTOR GROWTH; SINGLE CRYSTALS; SYNTHESIS (CHEMICAL); THERMODYNAMICS; VAPOR PHASE EPITAXY;

SEMICONDUCTING GALLIUM COMPOUNDS;

EID: 76449096136     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2009.12.055     Document Type: Article

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