Hydrogenation of the dominant interstitial defect in irradiated boron-doped silicon

Physical Review B - Condensed Matter and Materials Physics

Volumn 69, Issue 4, 2004, Pages

  Yarykin, N ^a   Feklisova, O V ^a   Weber, J ^b  

^a INSTITUTE OF MICROELECTRONICS TECHNOLOGY AND HIGH PURITY MATERIALS   (Russian Federation)

^b DRESDEN UNIVERSITY OF TECHNOLOGY   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

BORON; HYDROGEN; OXYGEN; SILICON;

ARTICLE; CHEMICAL INTERACTION; CHEMICAL STRUCTURE; CONCENTRATION RESPONSE; CRYSTAL; ELECTRICAL PARAMETERS; ELECTRON; HEAT TREATMENT; HYDROGENATION; IRRADIATION; KINETICS; MEASUREMENT; RADIATION RESPONSE; ROOM TEMPERATURE; SPECTROSCOPY; STRUCTURE ANALYSIS; TEMPERATURE DEPENDENCE; THERMOSTABILITY;

EID: 1542726266     PISSN: 10980121     EISSN: 1550235X     Source Type: Journal    
DOI: 10.1103/PhysRevB.69.045201     Document Type: Article

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