Simulation of hysteresis in a metal - ferroelectric - semiconductor structure

Semiconductors

Volumn 35, Issue 2, 2001, Pages 193-195

  Berman, L S ^a  

^a IOFFE INSTITUTE   (Russian Federation)

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EID: 0035255774     PISSN: 10637826     EISSN: None     Source Type: Journal    
DOI: 10.1134/1.1349930     Document Type: Article

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