Capacitance-voltage characteristics of SrTiO3/LaVO3 epitaxial heterostructures

Applied Physics Letters

Volumn 96, Issue 21, 2010, Pages

  Choi, Woong ^a,b   Lee, Sang Yoon ^b   Sands, Timothy D ^a,c  

^a University of California Berkeley   (United States)

^b SAMSUNG Electronics   (South Korea)

^c PURDUE UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

C-V CURVE; C-V MEASUREMENT; CAPACITANCE VOLTAGE CHARACTERISTIC; CAPACITANCE-VOLTAGE CHARACTERISTICS; DEPLETION LAYER; DEVICE APPLICATION; ELECTRICAL BEHAVIORS; HETEROSTRUCTURES; METAL INSULATOR SEMICONDUCTOR CAPACITORS; OXIDE HETEROSTRUCTURES; POSITIVE VOLTAGE; QUANTITATIVE ANALYSIS; SRTIO;

CAPACITANCE; CARRIER CONCENTRATION; CRYSTALS; METAL INSULATOR BOUNDARIES; MIS DEVICES; PULSED LASER DEPOSITION; PULSED LASERS; STRONTIUM ALLOYS;

HETEROJUNCTIONS;

EID: 77956246642     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3441400     Document Type: Article

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