Effect of SiNx gate dielectric deposition power and temperature on a-Si:H TFT stability

IEEE Electron Device Letters

Volumn 28, Issue 7, 2007, Pages 606-608

  Kattamis, Alex Z ^a   Cherenack, Kunigunde H ^a   Hekmatshoar, Bahman ^a   Cheng, I Chun ^a   Gleskova, Helena ^a   Sturm, James C ^a   Wagner, Sigard ^a  

^a Princeton University   (United States)

Author keywords

Amorphous silicon (a Si:H); Electrical stability; Flexible substrate; Plasma power; Silicon nitride gate dielectric; Thin film transistor (TFT)

Indexed keywords

ELECTRICAL STABILITY; FLEXIBLE SUBSTRATE; GATE DIELECTRIC DEPOSITION POWER; SILICON NITRIDE GATE DIELECTRIC;

AMORPHOUS SILICON; GATE DIELECTRICS; SEMICONDUCTING SILICON COMPOUNDS; SILICON NITRIDE; SUBSTRATES; THRESHOLD VOLTAGE;

THIN FILM TRANSISTORS;

EID: 34447254752     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2007.900078     Document Type: Article

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