Environmentally stable transparent organic/oxide hybrid transistor based on an oxide semiconductor and a polyimide gate insulator

IEEE Electron Device Letters

Volumn 31, Issue 5, 2010, Pages 446-448

  Yang, Shinhyuk ^a,b   Lee, Jeong Ik ^a   Ko Park, Sang Hee ^a   Cheong, Woo Seok ^a   Cho, Doo Hee ^a   Yoon, Sung Min ^a   Byun, Chun Won ^a   Hwang, Chi Sun ^a   Chu, Hye Yong ^a   Cho, Kyoung Ik ^a   Ahn, Taek ^c   Choi, Yoojeong ^d   Yi, Mi Hye ^d   Jang, Jin ^b  

^a Electronics and Telecommunications Research Institute (ETRI)   (South Korea)

^b Kyung Hee University   (South Korea)

^c Kyungsung University   (South Korea)

^d Korea Research Institute of Chemical Technology   (South Korea)

Author keywords

Oxide; Sputtering; Thin film transistor (TFT); Transparent

Indexed keywords

AMBIENT CONDITIONS; CONVENTIONAL PHOTOLITHOGRAPHY; GATE INSULATOR; GLASS SUBSTRATES; ON-OFF RATIO; ORGANIC INSULATORS; OXIDE SEMICONDUCTOR; SUBTHRESHOLD SWING; THIN-FILM TRANSISTOR (TFT);

POLYIMIDES; SEMICONDUCTING ORGANIC COMPOUNDS; SUBSTRATES; ZINC;

THIN FILM TRANSISTORS;

EID: 77951878864     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2010.2043334     Document Type: Article

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