Growth of single-crystalline ZnO film with two-dimensional periodic structure on Si(1 1 1) substrate by molecular beam epitaxy

Journal of Crystal Growth

Volumn 310, Issue 24, 2008, Pages 5428-5431

  Cui, X Z ^a,b   Zhang, T C ^a   Mei, Z X ^a   Liu, Z L ^a   Liu, Y P ^a   Guo, Y ^a   Xue, Q K ^a   Du, X L ^a  

^a INSTITUTE OF PHYSICS   (China)

^b QUFU NORMAL UNIVERSITY   (China)

Author keywords

A1. Reflection high energy electron diffraction; A3. Molecular beam epitaxy; B2. Silicon; B2. ZnO

Indexed keywords

CRYSTAL GROWTH; CRYSTALLINE MATERIALS; ELECTRON DIFFRACTION; FILM GROWTH; GROWTH TEMPERATURE; HIGH ENERGY ELECTRON DIFFRACTION; METALLIC FILMS; MOLECULAR BEAMS; MOLECULAR DYNAMICS; PERIODIC STRUCTURES; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTING ZINC COMPOUNDS; SEMICONDUCTOR QUANTUM WIRES; SILICON; SUBSTRATES; TWO DIMENSIONAL; ZINC ALLOYS; ZINC OXIDE;

A1. REFLECTION HIGH ENERGY ELECTRON DIFFRACTION; A3. MOLECULAR BEAM EPITAXY; B2. SILICON; B2. ZNO; CRYSTALLINE QUALITIES; EPILAYERS GROWN; GROWTH METHODS; SUBSTRATE ORIENTATIONS; ZNO FILMS;

MOLECULAR BEAM EPITAXY;

EID: 56949104101     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2008.09.140     Document Type: Article

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