Chemisorption sensing and analysis using silicon cantilever sensor based on n-type metal-oxide-semiconductor transistor

Microelectronic Engineering

Volumn 88, Issue 6, 2011, Pages 1019-1023

  Wang, Jian ^a   Feng, Bo ^a   Wu, Wengang ^a   Huang, Ying ^a  

^a PEKING UNIVERSITY   (China)

Author keywords

Cantilever sensor; Chemisorption; Molecular interaction mechanism; MOS transistor; Surface stress

Indexed keywords

4-MERCAPTOBENZOIC ACIDS; BOTTOM SURFACES; CANTILEVER SENSORS; CHEMICAL MOLECULES; CHEMICAL SENSING; COVALENT BONDING; FUNCTIONALIZED; GOLD FILM; HIGH STRESS; INTERACTION MECHANISMS; METAL-OXIDE-SEMICONDUCTOR TRANSISTOR; MOS TRANSISTORS; SILICON CANTILEVER; SURFACE STRESS; SURFACE STRESS SENSING; TRANSISTOR CHANNELS; VAPOR PHASE;

ACETONE; ACTIVE NETWORKS; CHEMICAL ANALYSIS; CHEMISORPTION; CRYSTAL ORIENTATION; DIELECTRIC DEVICES; ELECTROCHEMICAL SENSORS; ETHANOL; GOLD; GOLD COATINGS; MOLECULAR INTERACTIONS; MOLECULAR STRUCTURE; NANOCANTILEVERS; SELF ASSEMBLED MONOLAYERS; SEMICONDUCTING SILICON; SENSORS; SURFACE PROPERTIES; TRANSISTOR TRANSISTOR LOGIC CIRCUITS; WATER VAPOR;

TRANSISTORS;

EID: 79952448065     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mee.2011.01.069     Document Type: Article

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