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Volumn 64, Issue 1, 1998, Pages 1-6

Characterization of an integrated force sensor based on a MOS transistor for applications in scanning force microscopy

Author keywords

Cantilevers; Force sensors; Mos transistors; Scanning force microscopy

Indexed keywords

CMOS INTEGRATED CIRCUITS; MICROSCOPIC EXAMINATION; MOSFET DEVICES; NATURAL FREQUENCIES;

EID: 0031647458     PISSN: 09244247     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0924-4247(98)80051-4     Document Type: Article
Times cited : (23)

References (10)
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    • Tortonese, M.1    Barrett, R.C.2    Quate, C.F.3
  • 3
    • 1842698276 scopus 로고
    • Application of lead zirconate titanate thin film displacement sensors for the atomic force microscope
    • T. Fujii, S. Watanabe, M. Suzuki and T. Fujiu, Application of lead zirconate titanate thin film displacement sensors for the atomic force microscope, J. Vac. Sci. B, 13 (3) (1995) 1119-1122.
    • (1995) J. Vac. Sci. B , vol.13 , Issue.3 , pp. 1119-1122
    • Fujii, T.1    Watanabe, S.2    Suzuki, M.3    Fujiu, T.4
  • 4
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    • Atomic force microscopy using cantilevers with integrated tips and piezoelectric layer for actuation and detection
    • Barcelona, Spain
    • P.-F. Indermühle, G. Schürmann, G.-A. Racine and N.F. de Rooij, Atomic force microscopy using cantilevers with integrated tips and piezoelectric layer for actuation and detection, Proc. MME '96 Micromechanics Europe, Barcelona, Spain, 1996, pp. 204-207.
    • (1996) Proc. MME '96 Micromechanics Europe , pp. 204-207
    • Indermühle, P.-F.1    Schürmann, G.2    Racine, G.-A.3    De Rooij, N.F.4
  • 6
    • 0000863124 scopus 로고
    • Mobility anisotropy and piezoresistance in silicon p-type inversion layers
    • D. Colman, R.T. Bate and J.P. Mize, Mobility anisotropy and piezoresistance in silicon p-type inversion layers, J. Appl. Phys., 39 (4) (1968) 1923-1931.
    • (1968) J. Appl. Phys. , vol.39 , Issue.4 , pp. 1923-1931
    • Colman, D.1    Bate, R.T.2    Mize, J.P.3
  • 7
    • 0018542001 scopus 로고
    • Piezoresistivity effects in MOS-FET useful for pressure transducers
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    • (1979) J. Phys. D , vol.12 , pp. 1973-1983
    • Canali, C.1    Ferla, G.2    Morten, B.3    Taroni, A.4
  • 8
    • 0019545856 scopus 로고
    • Stress-sensitive properties of silicon-gate MOS devices
    • H. Mikoshiba, Stress-sensitive properties of silicon-gate MOS devices, Solid-State Electron., 24 (1981) 221-232.
    • (1981) Solid-State Electron. , vol.24 , pp. 221-232
    • Mikoshiba, H.1
  • 10
    • 0029753124 scopus 로고    scopus 로고
    • A force sensor using a CMOS inverter in view of its application in scanning force microscopy
    • San Diego, CA, USA
    • T. Akiyama, N. Blanc and N.F. de Rooij, A force sensor using a CMOS inverter in view of its application in scanning force microscopy, Proc. MEMS '96 Workshop, San Diego, CA, USA, 1996, pp. 447-450.
    • (1996) Proc. MEMS '96 Workshop , pp. 447-450
    • Akiyama, T.1    Blanc, N.2    De Rooij, N.F.3


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.