SCOPUS 정보 검색 플랫폼

Volumn 20, Issue 1, 2011, Pages

A continuous analytic channel potential solution to doped symmetric double-gate MOSFETs from the accumulation to the strong-inversion region

(5) He, Jin a,b Liu, Feng b Zhou, Xing Ye b Zhang, Jian b Zhang, Li Ning b

a NANTONG UNIVERSITY (China)

b PEKING UNIVERSITY (China)

Author keywords

doping; double gate (DG); modeling; MOSFETs; transistors

Indexed keywords

CHANNEL POTENTIAL; DG MOSFETS; DOPING; DOPING CONCENTRATION; DOUBLE-GATE; DOUBLE-GATE MOSFETS; FITTING PARAMETERS; GEOMETRICAL SIZES; INVERSION REGIONS; MODELING; MOSFETS; NUMERICAL SIMULATION; OPERATION REGIME;

DOPING (ADDITIVES); POISSON EQUATION;

MOSFET DEVICES;

EID: 79952395813 PISSN: 16741056 EISSN: None Source Type: Journal
DOI: 10.1088/1674-1056/20/1/016102 Document Type: Article

Times cited : (6)

References (15)

1
- 85056911965
- Frank D J, Laux S E and Fischetti M V 1992 Int. Electron Devices Meeting Tech. Dig. p 553
- (1992) Int. Electron Devices Meeting Tech. Dig. , pp. 553
- Frank, D.J.¹ Laux, S.E.² Fischetti, M.V.³

2
- 0037235405
- Chen Q, Bowman K A, Harrell E M and Meindl J D 2003 IEEE Circuits Devices Mag. 19 28
- (2003) IEEE Circuits Devices Mag. , vol.19 , Issue.1 , pp. 28
- Chen, Q.¹ Bowman, K.A.² Harrell, E.M.³ Meindl, J.D.⁴

3
- 19944399422
- Balestra F and Jomaah J 2005 Microelectronic Eng. 80 230
- (2005) Microelectronic Eng. , vol.80 , pp. 230
- Balestra, F.¹ Jomaah, J.²

4
- 0000338027
- Xia Y W and Wang S W 1990 Chin. J. Semiconductors 11 962
- (1990) Chin. J. Semiconductors , vol.11 , pp. 962
- Xia, Y.W.¹ Wang, S.W.²

5
- 0033732282
- Taur Y 2000 IEEE Electron Device Lett. 21 245
- (2000) IEEE Electron Device Lett. , vol.21 , Issue.5 , pp. 245
- Taur, Y.¹

6
- 12344336837
- Sallese J M, Krummenacher F, Pregaldiny F, Lallement C, Roy A S and Enz C C 2005 Solid-State Electron. 49 485
- (2005) Solid-State Electron. , vol.49 , Issue.3 , pp. 485
- Sallese, J.M.¹ Krummenacher, F.² Pregaldiny, F.³ Lallement, C.⁴ Roy, A.S.⁵ Enz, C.C.⁶

7
- 23944437241
- Adelmo Ortiz-Conde, Francisco J García-Snchez and Slavica Malobabic 2005 IEEE Trans. Electron Devices 52 1669
- (2005) IEEE Trans. Electron Devices , vol.52 , Issue.7 , pp. 1669
- Ortiz-Conde, A.¹ García-Snchez, F.J.² Malobabic, S.³

8
- 34247877544
- He J, Liu F, Zhang J, Feng J, Hu J H, Yang S Q and Chan M S 2007 IEEE Trans. Electron Devices 54 1203
- (2007) IEEE Trans. Electron Devices , vol.54 , Issue.5 , pp. 1203
- He, J.¹ Liu, F.² Zhang, J.³ Feng, J.⁴ Hu, J.H.⁵ Yang, S.Q.⁶ Chan, M.S.⁷

9
- 39749186785
- Zhou X, Zhu Z M, Rustagi S C, See G H, Zhu G J, Lin S H, Wei C Q and Lim G H 2008 IEEE Trans. Electron Devices 55 616
- (2008) IEEE Trans. Electron Devices , vol.55 , Issue.2 , pp. 616
- Zhou, X.¹ Zhu, Z.M.² Rustagi, S.C.³ See, G.H.⁴ Zhu, G.J.⁵ Lin, S.H.⁶ Wei, C.Q.⁷ Lim, G.H.⁸

10
- 79952382273
- He J, Chen Y, Li B, Wei Y Q and Chan M S 2008 Workshop on Compact Modeling, NSTI-Nanotech
- (2008) Workshop on Compact Modeling
- He, J.¹ Chen, Y.² Li, B.³ Wei, Y.Q.⁴ Chan, M.S.⁵

11
- 33947118993
- Online
- Compact Model Council Homepage. [Online] Available: http://www.eigroup. org/cmc
- Compact Model Council Homepage

12
- 0003801686
- (McGraw-Hill)
- Conte S D and de Boor C 1980 Elementary Numerical Analysis: An Algorithmic Approach (McGraw-Hill) p 56
- (1980) Elementary Numerical Analysis: An Algorithmic Approach , pp. 56
- Conte, S.D.¹ De Boor, C.²

13
- 0029209413
- Francis P, Terao A, Flandre D and van de Wiele F 1995 Solid-State Electron. 38 171
- (1995) Solid-State Electron. , vol.38 , Issue.1 , pp. 171
- Francis, P.¹ Terao, A.² Flandre, D.³ Van De Wiele, F.⁴

14
- 79952383062
- http://mathworld.wolfram.com/

15
- 33847644335
- He J, Chan M S, Zhang X and Wang Y Y 2006 IEEE Trans. Electron Devices 53 2008
- (2006) IEEE Trans. Electron Devices , vol.53 , Issue.9 , pp. 2008
- He, J.¹ Chan, M.S.² Zhang, X.³ Wang, Y.Y.⁴

* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.