Defect-enhanced photo-detection at 1550 nm in a silicon waveguide formed via LOCOS

Semiconductor Science and Technology

Volumn 26, Issue 4, 2011, Pages

  Logan, D F ^a   Knights, A P ^a   Jessop, P E ^a   Tarr, N G ^b  

^a MCMASTER UNIVERSITY   (Canada)

^b CARLETON UNIVERSITY   (Canada)

Author keywords

[No Author keywords available]

Indexed keywords

1550 NM; BAND GAPS; DEVICE STRUCTURES; HIGH SENSITIVITY; LOCAL OXIDATION OF SILICONS; OPTICAL POWER MONITOR; PHOTO DETECTION; PHOTORESPONSES; POLYCRYSTALLINE SILICON LAYERS; PROCESSING CONDITION; RESPONSIVITY; RIDGE WAVEGUIDES; SELF-ALIGNED; SILICON WAVEGUIDE; THERMAL TREATMENT;

DEFECTS; POLYSILICON; WAVEGUIDES;

SILICON OXIDES;

EID: 79952305714     PISSN: 02681242     EISSN: 13616641     Source Type: Journal    
DOI: 10.1088/0268-1242/26/4/045009     Document Type: Article

References (20)

1. Reed G T 2004 The optical age of silicon Nature 427 595-6 (Pubitemid 38248466)
2. Doylend J K, Knights A P, Luff B J, Shafiiha R, Asghari M and Gwilliam R M 2010 Modifying functionality of variable optical attenuator to signal monitoring through defect engineering Electron. Lett. 4 234-6
3. Masini G, Sahni S, Capellini G, Witzens J and Gunn C 2008 High-speed near infrared optical receivers based on Ge waveguide photodetectors integrated in a CMOS process Adv. Opt. Technol. 2008 196572
4. Knights A P, Bradley J D B, Gou S H and Jessop P E 2006 Silicon-on-insulator waveguide photodetector with self-ion-implantation engineered-enhanced infrared response J. Vac. Sci. Technol. A 24 783-6
5. Geis M W et al 2007 All silicon infrared photodiodes: photo response and effects of processing temperature Opt. Express 15 16886-95 (Pubitemid 350260548)
6. Logan D F, Jessop P E and Knights A P 2009 Modeling defect enhanced detection at 1550 nm in integrated silicon waveguide photodetectors J. Lightwave Technol. 27 930-7
7. Foster P J, Doylend J K, Mascher P, Knights A P and Coleman P G 2006 Optical attenuation in defect-engineered silicon rib waveguides J. Appl. Phys. 99 073101
8. Simoen E, Claeys C, Gaubas E and Ohyama H 2000 Impact of the divacancy on the generation-recombination properties of 10 MeV proton irradiated float-zone silicon diodes Nucl. Instrum. Methods Phys. Res. A 439 310-8 (Pubitemid 30531279)
9. Rowe L K, Elsey M, Tarr N G, Knights A P and Post E 2007 CMOS-compatible optical rib waveguides defined by local oxidation of silicon Electron. Lett. 43 392-3 (Pubitemid 46516286)
10. Pafchek R, Tummidi R, Li J, Webster M A, Chen E and Koch T L 2009 Low-loss silicon-on-insulator shallow-ridge TE and TM waveguides formed using thermal oxidation Appl. Opt. 48 958-63
11. Sherwood-Droz Nicols, Gondarenko Alexander and Lipson Michal 2010 Oxidized silicon-on-insulator (OxSOI) from bulk silicon: a new photonic platform Opt. Express 18 5785-90
12. 2 J. Appl. Phys. 56 2225-30 (Pubitemid 14642838)
13. MacKay G F, Manning B M and Tarr N G 1992 Rapid thermal annealing of in situ phosphorus-doped polysilicon emitters Can. J. Phys. 70 1109-11
14. Patton G L, Bravman J C and Plummer J D 1986 Physics, technology and modeling of polysilicon emitter contacts for VLSI bipolar transistors IEEE Trans. Electron Devices 33 1754-68
15. Logan D F, Velha P, Sorel M, De La Rue R M, Knights A P and Jessop P E 2010 Defect-enhanced silicon-on-insulator waveguide resonant photodetector with high sensitivity at 1.55 νm IEEE Photonics Technol. Lett. 22 1530-2
16. Yin T, Cohen R, Morse M M, Sarid G, Chetrit Y, Rubin D and Paniccia M J 2007 31 GHz Ge n-i-p waveguide photodetectors on silicon-on-insulator substrate Opt. Express 15 13965-71 (Pubitemid 47608608)
17. Brodsky M H, Cardona M and Cuomo J J 1977 Infrared and Raman spectra of the silicon-hydrogen bonds in amorphous silicon prepared by glow discharge and sputtering Phys. Rev. B 16 3556-71
18. Briand D, Sarret M, Le Bihan F, Bonnaud O and Pichon L 1995 Polysilicon in situ phosphorus doping control over large concentration range using low temperature, low pressure chemical vapour deposition growth process Mater. Sci. Technol. 11 1207-9
19. Wu I-W, Huang T-Y, Jackson W B, Lewis A G and Chiang A 1991 Passivation kinetics of two types of defects in polysilicon TFT by plasma hydrogenation IEEE Electron Device Lett. 12 181-3
20. Vavilov V S and Chelyadinskii A R 1995 Impurity ion implantation into silicon single crystals: efficiency and radiation damage Phys.-Usp. 38 333-44