Defect-enhanced silicon-on-insulator waveguide resonant photodetector with high sensitivity at 1.55 μm

IEEE Photonics Technology Letters

Volumn 22, Issue 20, 2010, Pages 1530-1532

  Logan, Dylan F ^a   Velha, Philippe ^b   Sorel, Marc ^b   De La Rue, Richard M ^b   Knights, Andrew P ^a   Jessop, Paul E ^a  

^a MCMASTER UNIVERSITY   (Canada)

^b UNIVERSITY OF GLASGOW   (United Kingdom)

Author keywords

Integrated optics; optical resonators; p i n photodiodes; semiconductor defects

Indexed keywords

1550 NM; ABSORPTION COEFFICIENTS; HIGH SENSITIVITY; OPTICAL-TO-ELECTRICAL CONVERSION; PIN PHOTODIODE; RESONANT ENHANCEMENTS; RESPONSIVITY; REVERSE BIAS; SELF-IMPLANTATION; SEMICONDUCTOR DEFECTS; SILICON MICRORING RESONATORS; SILICON ON INSULATOR WAVEGUIDE; SILICON WAVEGUIDE; SUB-BANDS;

DEFECTS; INTEGRATED OPTICS; OPTICAL MATERIALS; OPTICAL RESONATORS; OPTOELECTRONIC DEVICES; PHOTODETECTORS; PHOTODIODES; WAVEGUIDES;

PHOTONICS;

EID: 77957582356     PISSN: 10411135     EISSN: None     Source Type: Journal    
DOI: 10.1109/LPT.2010.2066963     Document Type: Article

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