SCOPUS 정보 검색 플랫폼

Thin Solid Films

Volumn 519, Issue 10, 2011, Pages 3397-3400

Electrical characteristics of a ZrO2/SiO2 modified tunnel barrier for low-temperature non-volatile memory

(2) You, Hee Wook a Cho, Won Ju a

a Kwangwoon University (South Korea)

Author keywords

Charge trap flash; Nonvolatile memory; Tunnel barrier; ZrO2

Indexed keywords

BLOCKING LAYERS; CHARGE TRAP; CHARGE TRAP FLASH MEMORIES; ELECTRICAL CHARACTERISTIC; FIELD SENSITIVITY; FORMING GAS ANNEALING; HIGH-K HFO; LOW PROCESS TEMPERATURE; LOW TEMPERATURES; NON-VOLATILE MEMORIES; TRAPPING LAYERS; TRAPPING PROPERTIES; TUNNEL BARRIER; ZRO2;

CHARGE TRAPPING; HAFNIUM COMPOUNDS; SILICON COMPOUNDS; ZIRCONIUM ALLOYS;

FLASH MEMORY;

EID: 79952295842 PISSN: 00406090 EISSN: None Source Type: Journal
DOI: 10.1016/j.tsf.2011.01.089 Document Type: Article

Times cited : (4)

References (12)

1
- 0035148013
- J. Bu, and M.H. White Solid State Electron. 45 2001 113
- (2001) Solid State Electron. , vol.45 , pp. 113
- Bu, J.¹ White, M.H.²

2
- 0000090297
- K.K. Likharev Appl. Phys. Lett. 73 1998 2137
- (1998) Appl. Phys. Lett. , vol.73 , pp. 2137
- Likharev, K.K.¹

3
- 79952304650
- K. Nakamura, S. Taguchi, and M. Wada IEDM Tech. Dig. 1988 424
- (1988) IEDM Tech. Dig. , pp. 424
- Nakamura, K.¹ Taguchi, S.² Wada, M.³

4
- 43049162382
- C.R. Hsieh, C.H. Lai, B.C. Lin, J.C. Lou, J.K. Lin, Y.L. Lai, and H.L. Lai IEEE C. Elec. Devices 2007 629
- (2007) IEEE C. Elec. Devices , pp. 629
- Hsieh, C.R.¹ Lai, C.H.² Lin, B.C.³ Lou, J.C.⁴ Lin, J.K.⁵ Lai, Y.L.⁶ Lai, H.L.⁷

5
- 34547422784
- S. Maikap, H.Y. Lee, T.Y. Wang, P.J. Tzeng, C.C. Wang, L.S. Lee, K.C. Liu, J.R. Yang, and M.J. Tsai Semicond. Sci. Technol. 22 2007 884
- (2007) Semicond. Sci. Technol. , vol.22 , pp. 884
- Maikap, S.¹ Lee, H.Y.² Wang, T.Y.³ Tzeng, P.J.⁴ Wang, C.C.⁵ Lee, L.S.⁶ Liu, K.C.⁷ Yang, J.R.⁸ Tsai, M.J.⁹

6
- 79952298810
- H.T. Chen, S.I. Hsieh, C.J. Lin, and Y.C. King IEEE Elec. Dev. Lett. 28 2007 6
- (2007) IEEE Elec. Dev. Lett. , vol.28 , pp. 6
- Chen, H.T.¹ Hsieh, S.I.² Lin, C.J.³ King, Y.C.⁴

7
- 49049121924
- H.T. Lue, S.Y. Wang, E.K. Lai, Y.H. Shih, S.C. Lai, L.W. Yang, K.C. Chen, J. Ku, K.Y. Hsieh, R. Liu, and C.Y. Lu IEDM Tech. Dig. 5-7 2005 547
- (2005) IEDM Tech. Dig. , vol.57 , pp. 547
- Lue, H.T.¹ Wang, S.Y.² Lai, E.K.³ Shih, Y.H.⁴ Lai, S.C.⁵ Yang, L.W.⁶ Chen, K.C.⁷ Ku, J.⁸ Hsieh, K.Y.⁹ Liu, R.¹⁰ Lu, C.Y.¹¹

8
- 34547213271
- W. Chen, W.J. Liu, M. Zhang, S.J. Ding, D.W. Zhang, and M.F. Li Appl. Phys. Lett. 91 2007 022908
- (2007) Appl. Phys. Lett. , vol.91 , pp. 022908
- Chen, W.¹ Liu, W.J.² Zhang, M.³ Ding, S.J.⁴ Zhang, D.W.⁵ Li, M.F.⁶

9
- 0033698931
- W.J. Qi, R. Nieh, B.H. Lee, K. Onishi, L. Kang, Y. Jeon, J.C. Lee, V. Kaushik, B.Y. Nguyen, L. Prabhu, K. Eisenbeiser, and J. Finder VLSI Symp. 2000 40
- (2000) VLSI Symp. , pp. 40
- Qi, W.J.¹ Nieh, R.² Lee, B.H.³ Onishi, K.⁴ Kang, L.⁵ Jeon, Y.⁶ Lee, J.C.⁷ Kaushik, V.⁸ Nguyen, B.Y.⁹ Prabhu, L.¹⁰ Eisenbeiser, K.¹¹ Finder, J.¹²

10
- 0033315071
- Y. Ma, Y. Ono, L. Stecker, D.R. Evans, and S.T. Hsu IEDM Tech. Dig. 1999 149
- (1999) IEDM Tech. Dig. , pp. 149
- Ma, Y.¹ Ono, Y.² Stecker, L.³ Evans, D.R.⁴ Hsu, S.T.⁵

11
- 0000020022
- M. Copel, M. Gribelyuk, and E. Gusev Appl. Phys. Lett. 76 2000 436
- (2000) Appl. Phys. Lett. , vol.76 , pp. 436
- Copel, M.¹ Gribelyuk, M.² Gusev, E.³

12
- 0035394783
- C. Zhao, G. Roebben, H. Bender, E. Young, S. Haukka, M. Houssa, M. Naili, S. Degendt, M. Heyns, and O. Van Der Biest Microelectron. Reliab. 41 2001 995
- (2001) Microelectron. Reliab. , vol.41 , pp. 995
- Zhao, C.¹ Roebben, G.² Bender, H.³ Young, E.⁴ Haukka, S.⁵ Houssa, M.⁶ Naili, M.⁷ Degendt, S.⁸ Heyns, M.⁹ Van Der Biest, O.¹⁰

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