Ambipolar field-effect transistor based on α,ω- dihexylquaterthiophene and α,ω-diperfluoroquaterthiophene vertical heterojunction

Microelectronics Reliability

Volumn 50, Issue 9-11, 2010, Pages 1861-1865

  Generali, Gianluca ^a   Capelli, Raffaella ^a   Toffanin, Stefano ^a   Facchetti, Antonio ^b   Muccini, Michele ^a  

^a CNR   (Italy)

^b POLYERA CORPORATION   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

AMBIPOLAR; AMBIPOLAR FIELD; BI-LAYER; COMPLEX STRUCTURE; CONDUCTING FILMS; DEVICE ACTIVE REGION; DEVICE STRUCTURES; FIELD-EFFECT; HIGH MOBILITY; LIGHT GENERATION; NOVEL ARCHITECTURE; OPTICAL LAYERS; ORGANIC ELECTRO LUMINESCENCE; ORGANIC HETEROSTRUCTURES; RESEARCH GROUPS; SINGLE LAYER;

ELECTROLUMINESCENCE; EXCITONS; FIELD EFFECT TRANSISTORS; HETEROJUNCTIONS; QUENCHING;

ORGANIC FIELD EFFECT TRANSISTORS;

EID: 79952204706     PISSN: 00262714     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.microrel.2010.07.047     Document Type: Conference Paper

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