SCOPUS 정보 검색 플랫폼

Volumn 104, Issue 3, 2008, Pages

Finite difference time domain analysis of the light extraction efficiency in organic light-emitting field-effect transistors

(3) Gehlhaar, Robert a Yahiro, Masayuki a Adachi, Chihaya a

a KYUSHU UNIVERSITY (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRODES; ELECTROLYSIS; EPITAXIAL GROWTH; FIELD EFFECT TRANSISTORS; FINITE DIFFERENCE METHOD; FINITE DIFFERENCE TIME DOMAIN METHOD; LIGHT; LIGHT EMISSION; LIGHT SOURCES; LIGHTING; METAL RECOVERY; METALLIC COMPOUNDS; METALLIZING; METALS; MOLECULAR BEAM EPITAXY; NONMETALS; NUMERICAL ANALYSIS; PHOTOLITHOGRAPHY; SILICA; SILICON; SILVER; SURFACE ANALYSIS; THICK FILMS; THREE DIMENSIONAL; TIME DOMAIN ANALYSIS; TIN; TITANIUM COMPOUNDS; TRANSISTORS;

AMBIPOLAR; BOTTOM CONTACT; BOTTOM GATE; ELECTRODE DISTANCES; ELECTRODE THICKNESS; EMISSION EFFICIENCIES; FINITE DIFFERENCE TIME-DOMAIN METHODS; FINITE-DIFFERENCE TIME-DOMAIN ANALYSIS; INDIUM-TIN OXIDE ELECTRODES; LIGHT EXTRACTIONS; LIGHT-EMITTING DEVICES; LIGHT-EXTRACTION EFFICIENCY; METAL OXIDE ELECTRODES; OPTICAL SIMULATIONS; ORGANIC FILMS; ORGANIC LIGHT-EMITTING FIELD-EFFECT TRANSISTORS; ORGANIC THIN FILMS; OUT-COUPLING EFFICIENCY; SI SUBSTRATE; SILICON DIOXIDES; SILICON SUBSTRATES;

EXTRACTION;

EID: 49749137569 PISSN: 00218979 EISSN: None Source Type: Journal
DOI: 10.1063/1.2968132 Document Type: Article

Times cited : (12)

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