SCOPUS 정보 검색 플랫폼

Volumn 94, Issue 2, 2009, Pages

Ambipolar pentacene/ C60 -based field-effect transistors with high hole and electron mobilities in ambient atmosphere

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRICAL ENGINEERING; ELECTRON MOBILITY; HOLE MOBILITY; MESFET DEVICES; THRESHOLD VOLTAGE; TRANSISTORS;

AIR STABILITIES; AMBIENT ATMOSPHERES; AMBIPOLAR; AMBIPOLAR FIELDS; AND GATES; APPLICATIONS.; HETEROSTRUCTURE; PENTACENE LAYERS;

FIELD EFFECT TRANSISTORS;

EID: 58349091948 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.3072608 Document Type: Article

Times cited : (44)

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