Influence of interface modifications on carrier mobilities in rubrene single crystal ambipolar field-effect transistors

Journal of Applied Physics

Volumn 105, Issue 12, 2009, Pages

  Wang, Yan ^a   Kumashiro, Ryotaro ^a   Nouchi, Ryo ^a   Komatsu, Naoya ^a   Tanigaki, Katsumi ^a  

^a TOHOKU UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

AMBIPOLAR FIELD; EFFICIENCY PARAMETERS; ELECTRON CARRIER; GATE INSULATOR; GATE VOLTAGES; GATE-DIELECTRIC INTERFACES; HEXAMETHYLDISILAZANE; INTERFACE MODIFICATION; MODIFICATION LAYERS; PARYLENE C; RUBRENE; SHALLOW TRAPS; SURFACE MOLECULAR STRUCTURE; SURFACE POLARIZATIONS; TRANSPORT EFFICIENCY;

CALCIUM; ELECTRIC POTENTIAL; ELECTRODES; FIELD EFFECT TRANSISTORS; GATE DIELECTRICS; GATES (TRANSISTOR); ION BEAMS; MESFET DEVICES; SILICON COMPOUNDS; SINGLE CRYSTALS; SURFACE STRUCTURE;

CARRIER MOBILITY;

EID: 67650227613     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3153946     Document Type: Conference Paper

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