Influence of a ZnMnTe buffer layer on the growth of ZnTe on (0 0 1)GaAs by MOVPE

Journal of Crystal Growth

Volumn 249, Issue 1-2, 2003, Pages 15-22

  Zozime, A ^a,c   Seibt, M ^b   Ertel, J ^a   Tromson Carli, A ^a   Druilhe, R ^a   Grattepain, C ^a   Triboulet, R ^a  

^a Centre National de la Recherche Scientifique   (France)

^b IV Physikalisches Institut   (Germany)

^c UNIVERSITÉ D EVRY VAL D ESSONNE   (France)

Author keywords

A1. Growth models; A3. Metalorganic vapor phase epitaxy; B2. Semiconducting II VI materials

Indexed keywords

CRYSTAL LATTICES; CRYSTAL MICROSTRUCTURE; DEPOSITION; DISLOCATIONS (CRYSTALS); SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING ZINC COMPOUNDS; TRANSMISSION ELECTRON MICROSCOPY;

ELECTRONIC DEVICES;

METALLORGANIC VAPOR PHASE EPITAXY;

EID: 0037296137     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(02)02066-3     Document Type: Conference Paper

References (8)

1. Patriarche G., Girard-Francois A., Rivière J.P., Castaing J. Mater. Sci. Eng. B45:1997;76-84.
2. Etgens V.H., Pinchaux R., Sauvage-Simkin M., Massies J., Jedrecy N., Greiser N., Waldhauer A., Tatarenko S. Appl. Surf. Sci. 56-58:1992;597-603.
3. Longo M., Lovergine N., Mancini A.M., Leo G., Berti M. J. Vac. Sci. Technol. B16:1998;2650-2655.
4. Etgens V.H., Sauvage-Simkin M., Pinchaux R., Massies J., Jedrecy N., Waldhauer A., Tatarenko S., Jouneau P.H. Phys. Rev: B. 47-16:1993;10607-10612.
5. Ballingall J.M., Wroge M.L., Leopold D.J. Appl. Phys. Lett. 48-19:1986;1273-1275.
6. Yin J., Huang Q., Zhou J. J. Appl. Phys. 79-7:1996;3714-3717.
7. A. Tromson-Carli, J. Ertel, R. Druilhe, A. Zozime, R. Triboulet, EW-MOVPE VI, 1995.
8. Landoldt- Bernstein, in: K.H. Hellwege (Ed.), Numerical Data and Functional Relationships in Science and Technology, New Series, III/17b, 1982, p. 311.