Strain in the HWE-grown ZnTe/(1 0 0) GaAs hetero-interface

Journal of Crystal Growth

Volumn 235, Issue 1-4, 2002, Pages 201-206

  Kim, B J ^a   Wang, J F ^a   Ishikawa, Y ^a   Park, Y G ^a   Sindo, D ^a   Abe, S ^b   Masumoto, K ^b   Isshiki, M ^a  

^a TOHOKU UNIVERSITY   (Japan)

^b Research Institute of Electric and Magnetic Alloys Sendai   (Japan)

Author keywords

A1. Defects; A3. Hot wall epitaxy; B1. Zinc compounds; B2. Semiconducting II VI compounds

Indexed keywords

CRYSTAL LATTICES; EPITAXIAL GROWTH; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING ZINC COMPOUNDS; STRAIN; SUBSTRATES; TRANSMISSION ELECTRON MICROSCOPY; X RAY DIFFRACTION ANALYSIS;

EPILAYERS; HOT WALL EPITAXY (HWE);

INTERFACES (MATERIALS);

EID: 0036467130     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(01)02081-4     Document Type: Article

References (8)