The dependence of the strain effects on the ZnTe layer thicknesses in ZnTe/GaAs heterostructures

Journal of Physics and Chemistry of Solids

Volumn 64, Issue 2, 2003, Pages 357-360

  Jang, M S ^a   Oh, S H ^a   Lee, K H ^a   Bahng, J H ^a   Choi, J C ^a   Jeong, K H ^a   Park, H L ^a   Choo, D C ^b   Lee, D U ^b   Kim, T W ^b  

^a Yonsei University   (South Korea)

^b Kwangwoon University   (South Korea)

Author keywords

A. Semiconductors; A. Thin films; D. Optical properties

Indexed keywords

ELLIPSOMETRY; MOLECULAR BEAM EPITAXY; PHOTOLUMINESCENCE; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING ZINC COMPOUNDS; SEMICONDUCTOR GROWTH;

STRAIN EFFECTS;

HETEROJUNCTIONS;

EID: 0037290575     PISSN: 00223697     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-3697(02)00340-2     Document Type: Article

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